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期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：硅器件和材料
收藏年代2000～2023



全部

2000 2001 2002 2009 2013 2014
2015 2017 2020 2021 2022 2023

2000, vol.100, no.295 2000, vol.100, no.296 2000, vol.100, no.373 2000, vol.100, no.374 2000, vol.100, no.477 2000, vol.100, no.517
2000, vol.100, no.603 2000, vol.100, no.652 2000, vol.100, no.653 2000, vol.100, no.668

题名作者出版年年卷期
The formation of ruthenium electrodes by the chemical vapor deposition from a Ru(C{sub}5H{sub}4C{sub}2H{sub}2){sub}2 precursor dissolved in tetrahydrofuraneY. Shimamoto; M. Hiratani; Y. Matsui; T. Nabatame20002000, vol.100, no.653
Low temperature preparation and orientation control of high quality SrBi{sub}2Ta{sub}2O{sub}9 thin filmsNorimasa Nukaga; Masatoshi Mitsuya; Hiroshi Funakubo20002000, vol.100, no.653
Preparation and characterization of Pb(Mg{sub}(1/3)Nb{sub}(2/3))O{sub}3 thin film capacitorsT. Nabatame; T. Suzuki; T. Okamoto; S. Watahiki; M. Ogihara; M. Tanaka; H. Matsuyama20002000, vol.100, no.653
Degradation of Pt/PLZT/Pt capacitors caused by hydroxyl group in interlayer dielectricsKazufumi Suenaga; Kiyoshi Ogata; Hiromichi Waki; Mitshiro Mori20002000, vol.100, no.653
Morphotropic phase boundaries and physical propertiesY. Ishibashi20002000, vol.100, no.653



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