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期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：硅器件和材料
收藏年代2000～2023



全部

2000 2001 2002 2009 2013 2014
2015 2017 2020 2021 2022 2023

2000, vol.100, no.295 2000, vol.100, no.296 2000, vol.100, no.373 2000, vol.100, no.374 2000, vol.100, no.477 2000, vol.100, no.517
2000, vol.100, no.603 2000, vol.100, no.652 2000, vol.100, no.653 2000, vol.100, no.668

题名作者出版年年卷期
Short channel MOSFET modelKunihiro Suzuki20002000, vol.100, no.296
Applying TCAD to MOSFET process and device designHirotaka Komatsubara; Noriyuki Miura; Hirokazu Hayashi; Koichi Fukuda; Tsukasa Yajima; Masahiro Yoshida; Keiichi Wakayama; Akito Nishitani; Yoshiki Nagatomo20002000, vol.100, no.296
Design of 0.12um CMOS device using TCAD statistical simulationTomoyuki Fukuda; Atsushi Honzawa; Shinichiro Wada; Kazutaka Mori; Hisako Sato; Hisaaki Kunitomo20002000, vol.100, no.296
Design guideline and performance prediction of "SBB" SOI MOSFETsShichio Funakoshi; Mamoru Terauchi; Kazuo Terada20002000, vol.100, no.296
Improvements on stability of 3-D mesh generation based on advancing front methodKatsuhiko Tanaka; Akio Notsu; Masami Hane20002000, vol.100, no.296
Challenges on modeling & simulation for sub-100nm technology nodeNorihiko Kotani20002000, vol.100, no.296
Device simulation with quantum effect by density gradient methodKazuya Matsuzawa; Shin-ichi Takagi; Mariko Takayanagi; Hiroyoshi Tanimoto20002000, vol.100, no.296
Quantum mechanical modeling and simulation using drift-diffusionT. Hanajiri; M. Niizato; T. Toyabe; T. Sugano; A. Saito; Y. Akagi20002000, vol.100, no.296
Changed charge partitioning for sub-100nm MOSFET due to ballistic transportT. Okagaki; M. Tanaka; H. Ueno; M. Miura-Mattausch20002000, vol.100, no.296
Effect of incomplete ionization of gate impurity and band-gap narrowing on tunneling current from the gateH. Watanabe; S. Takagi20002000, vol.100, no.296
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