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期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：硅器件和材料
收藏年代2000～2023



全部

2000 2001 2002 2009 2013 2014
2015 2017 2020 2021 2022 2023

2000, vol.100, no.295 2000, vol.100, no.296 2000, vol.100, no.373 2000, vol.100, no.374 2000, vol.100, no.477 2000, vol.100, no.517
2000, vol.100, no.603 2000, vol.100, no.652 2000, vol.100, no.653 2000, vol.100, no.668

题名作者出版年年卷期
X-ray mask delineation performances by advanced EB writer EB-X3M. Ezaki; Y. Nakayama; Y. Kikuchi; S. Tsuboi; H. Watanabe; H. Aoyama; Y. Matsui; S. Ohki; T. Morosawa; S. Takahashi; M. Oda20002000, vol.100, no.477
Line edge roughness of resist pattern in electron beam lithographyMasaki Yoshizawa; Shigeru Moriya20002000, vol.100, no.477
A 70 nm high performance CMOS technology with 1.0 V operationA. Ono; K. Fukasaku; T. Mastuda; T. Fukai; N. Ikezawa; K. Imai; T. Horiuchi20002000, vol.100, no.477
Low resistivity TaNx/Ta/TaNx metal gate FDSOI-CMOS technology featuring low-temperature processingHiroyuki Shimada; Ichiro Ohshima; Shinichi Nkao; Munekatsu Nakagawa; Shigetoshi Sugawa; Tadahiro Ohmi20002000, vol.100, no.477
Influence of nitrogen incorporation into ultrathin gate oxide for NBTIN. Kimizuka; K. Imai; T. Iizuka; C. T. Liu; R. C. Keller; T. Horiuchi20002000, vol.100, no.477
Two dimensional effect on the V{sub}th fluctuation of intrinsic-body SOI-MOSFETRisho Koh; Kiyoshi Takeuchi; Hisashi Takemura; Tohru Mogami20002000, vol.100, no.477
Impact of 0.18μm SOI CMOS technology using hybrid trench isolation with high resistivity substrate on embedded RF/analog applicationsS. Maeda; Y. Wada; K. Yamamoto; H. Komurasaki; T. Matsumoto; Y. Hirano; T. Iwamatsu; Y. Yamaguchi; T. Ipposhi; K. Ueda; K. Mashiko; S. Maegawa; M. Inuishi20002000, vol.100, no.477
Improvement of analog characteristics by epitaxial channel structureT. Ohguro; R. Hasumi; M. Nishigori; H. Oyamatsu; F. Matsuoka; Y. Toyoshima20002000, vol.100, no.477
A direct tunneling memory (DTM) utilizing novel floating gate structureN. Horiguchi; T. Usuki; K. Goto; T. Futatsugi; T. Sugii; N. Yokoyama20002000, vol.100, no.477



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