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期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：硅器件和材料
收藏年代2000～2023



全部

2000 2001 2002 2009 2013 2014
2015 2017 2020 2021 2022 2023

2000, vol.100, no.295 2000, vol.100, no.296 2000, vol.100, no.373 2000, vol.100, no.374 2000, vol.100, no.477 2000, vol.100, no.517
2000, vol.100, no.603 2000, vol.100, no.652 2000, vol.100, no.653 2000, vol.100, no.668

题名作者出版年年卷期
Ir film deposition on an epitaxial (100)ZrN/(100)Si substrate treated by HF + hydrazine solutionSadayoshi Horii; Takeo Toda; Susumu Horita20002000, vol.100, no.652
Al{sub}2O{sub}3/Si{sub}3N{sub}4 buffer layer for MFIS structuresYoshihisa Fujisaki; Hiroshi Ishiwara20002000, vol.100, no.652
Effect of Bi content on physical properties of Bi{sub}2SiO{sub}5 thin filmsMasaki Yamaguchi; Takao Nagatomo; Yoichiro Masuda20002000, vol.100, no.652
Preparation of (Bi,La){sub}4Ti{sub}3O{sub}12 films by the sol-gel technique and application to the MFMIS structuresTakeaki Isobe; Eisuke Tokumitsu; Takeshi Kijima; Hiroshi Ishiwara20002000, vol.100, no.652
Analysis of retention characteristics of MFIS and MIFIS structuresMitsue Takahashi; Kazushi Kodama; Minoru Noda; Masanori Okuyama20002000, vol.100, no.652
Preparation and characterization of MIS and MFIS structures using MgO buffer I-layerHironori Fujisawa; Shuhei Murata; Hiromasu Matsuoka; Tatsuya Bandou; Masaru Shimizu; Hirohiko Niu20002000, vol.100, no.652
Fabrication and electrical properties of ferroelectric-gate FET with epitaxial gate structureS. Migita; K. Sakamaki; S. -B. Xiong; H. Ota; Y. Tarui; S. Sakai20002000, vol.100, no.652
Crystal structures and ferroelectric properties of oxide-ferroelectric materials used for FeRAMsY. Shimakawa; Y. Kubo; Y. Tauchi; T. Kamiyama; H. Asano20002000, vol.100, no.652



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