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期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：硅器件和材料
收藏年代2000～2023



全部

2000 2001 2002 2009 2013 2014
2015 2017 2020 2021 2022 2023

2000, vol.100, no.295 2000, vol.100, no.296 2000, vol.100, no.373 2000, vol.100, no.374 2000, vol.100, no.477 2000, vol.100, no.517
2000, vol.100, no.603 2000, vol.100, no.652 2000, vol.100, no.653 2000, vol.100, no.668

题名作者出版年年卷期
High performance and damage-free plasma etching processor for future ULSI patterningSeiji Samukawa20002000, vol.100, no.373
Damage-free contact etching using balanced electron drift magnetron plasmaRyu Kaihara; Masaki Hirayama; Shigetoshi Sugawa; Tadahiro Ohmi20002000, vol.100, no.373
Breakdown mechanism of thin gate oxide filmsA. Teramoto; M. Inoue; H. Umeda; Y. Ohno; A. Nishimoto20002000, vol.100, no.373
Hydrogen-free and damage-free nitridation of Si substrate using atomic nitrogen radicalsYoshihisa Fujisaki; Hiroshi Ishiwara20002000, vol.100, no.373
Improvement of SiO{sub}2/Si interfaces prepared by radical oxygen processKoji Usuda; Makoto Nagamine; Hitoshi Itoh; Akira Toriumi20002000, vol.100, no.373
Low temperature formation of silicon oxynitride films by microwave-excited high-density Kr/O{sub}2/N{sub}2 plasmaKazuo Ohtsubo; Yuji Saito; Katsuyuki Sekine; Masaki Hirayama; Shigetoshi Sugawa; Herzl Aharoni; Tadahiro Ohmi20002000, vol.100, no.373



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