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期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：硅器件和材料
收藏年代2000～2023



全部

2000 2001 2002 2009 2013 2014
2015 2017 2020 2021 2022 2023

2000, vol.100, no.295 2000, vol.100, no.296 2000, vol.100, no.373 2000, vol.100, no.374 2000, vol.100, no.477 2000, vol.100, no.517
2000, vol.100, no.603 2000, vol.100, no.652 2000, vol.100, no.653 2000, vol.100, no.668

题名作者出版年年卷期
Improvement and applications of gas cluster ion beamHiromichi Kinpara; Toshio Seki; Jiro Matsuo; Gikan Takaoka20002000, vol.100, no.517
The TEM sample preparation method for quick turn around time on TEM evaluationMasaaki Furuta; Naoto Hashikawa; Yukinori Hirose; Kouji Fukumoto; Youji Mashiko20002000, vol.100, no.517
Influence of annealing on carrier profiles near the buried oxide interface of bonded SOI wafersShinya Ito; Hideo Uchida; Masaya Ichimura; Eisuke Arai20002000, vol.100, no.517
Molecular dynamics simulation of fluorine ion etching of siliconShun-ichi Chiba; Takaaki Aoki; Jiro Matsuo; Gikan Takaoka20002000, vol.100, no.517
Distribution of defects in diborane and hydrogen implanted silicon prepared by ion shower implantationK. Naga; K. Yokota; K. Nakamura; M. Tanjou; K. Matsuda; H. Takano20002000, vol.100, no.517
Epitaxial growth of SiGeC alloyed crystals using UHV-CVDT. Saitoh; Y. Kanzawa; K. Yuki; K. Toyoda; A. Asai; T. Takagi; M. Kubo20002000, vol.100, no.517
Observation of Ge segregation and Si-Ge intermixing by CAICISSTakashi Tokuda; Yasunori Hattori; Motoki Okinaka; Jun Ohta; Masahiro Nunoshita20002000, vol.100, no.517
Study of direct tunneling of very thin SiO{sub}2 filmY. Takami; Y. Kitagawa; N. Matsuo20002000, vol.100, no.517
Impacts of residual chlorine in CVD-TiN gate electrode on the gate oxide reliabilityMasaru Moriwaki; Takayuki Yamada20002000, vol.100, no.517
Properties of MOD-Bi{sub}2SiO{sub}5 thin films at low temperaturesMasaki Yamaguchi; Takao Nagatomo; Yoichiro Masuda20002000, vol.100, no.517
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