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期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：硅器件和材料
收藏年代2000～2023



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2000 2001 2002 2009 2013 2014
2015 2017 2020 2021 2022 2023

2000, vol.100, no.295 2000, vol.100, no.296 2000, vol.100, no.373 2000, vol.100, no.374 2000, vol.100, no.477 2000, vol.100, no.517
2000, vol.100, no.603 2000, vol.100, no.652 2000, vol.100, no.653 2000, vol.100, no.668

题名作者出版年年卷期
Effect of gate potential on photosensing characteristic of SOI-MOSFET/photodiode composite deviceYuko Uryu; Tanemasa Asano20002000, vol.100, no.668
Substrate's potential fixing of high voltage SOI-IC by BOX piercing contactKenya Kobayashi; Masayuki Itou; Kazunari Takasugi; Masahiro Toeda20002000, vol.100, no.668
C-band SOI power MOSFETs fabricated using bonded SOI substrateSatoshi Matsumoto; Yasushi Hiraoka; Tatsuo Sakai20002000, vol.100, no.668
Enhancement of FD SOI MOSFET properties by the fully-silicided S/D structureTakashi Ichimori; Norio Hirashita20002000, vol.100, no.668
Characteristic of SOI-MOSFET with Ni-silicide Schottky-barrier source/drainGou Nakagawa; Takayori Shikano; Tanemasa Asano20002000, vol.100, no.668
Suppression for threshold voltage fluctuation due to SOI thickness variation in fully-depleted SOI MOSFETsToshinori Numata; Mitsuhiro Noguchi; Yukihito Oowaki; Shin-ichi Takagi20002000, vol.100, no.668
The influence of the device miniaturization on the I{sub}ON enhancement in i-body SOI-MOSFET'sRisho Koh; Hisashi Takemura; Kiyoshi Takeuchi; Tohru Mogami20002000, vol.100, no.668
Device structure and electrical characteristics of strained-Si-on-insulator (strained-SOI) MOSFETsShin-ichi Takagi; Tomohisa Mizuno; Naoharu Sugiyama; Tsutomu Tezuka; Tetsuo Hatakeyama; Koji Usuda; Atushi Kurobe20002000, vol.100, no.668
Quantum mechanical narrow channel effect in ultra narrow MOSFETsH. Majima; T. Hiramoto20002000, vol.100, no.668
Low-leakage and highly reliable 1.5 nm SiON gate dielectric using radical oxynitridation for sub-0.1 μm CMOSMitsuhiro Togo; Koji Watanabe; Toyoji Yamamoto; Nobuyuki Ikarashi; Tohru Tatsumi; Haruhiko Ono; Tohru Mogami20002000, vol.100, no.668
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