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期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



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2004 2005 2006 2007

2006, vol.27, no.1 2006, vol.27, no.10 2006, vol.27, no.11 2006, vol.27, no.12 2006, vol.27, no.2 2006, vol.27, no.3
2006, vol.27, no.4 2006, vol.27, no.5 2006, vol.27, no.6 2006, vol.27, no.7 2006, vol.27, no.8 2006, vol.27, no.9

题名作者出版年年卷期
Optically Modulated High-Sensitivity Heterostructure VaractorXia Zhao; Adriano Cola; Andrea Tersigni; Fabio Quaranta; Eric Gallo; Jonathan E. Spanier; Bahram Nabet20062006, vol.27, no.9
High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field PlatesY. Dora; A. Chakraborty; L. McCarthy; S. Keller; S. P. DenBaars; U. K. Mishra20062006, vol.27, no.9
The 1.6-kV AlGaN/GaN HFETsN. Tipirneni; A. Koudymov; V. Adivarahan; J. Yang; G. Simin; M. Asif Khan20062006, vol.27, no.9
AlN/GaN Insulated-Gate HFETs Using Cat-CVD SiNMasataka Higashiwaki; Takashi Mimura; Toshiaki Matsui20062006, vol.27, no.9
A Capless InP/In{sub}0.52Al{sub}0.48As/In{sub}0.53Ga{sub}0.47As p-HEMT Having a Self-Aligned Gate StructureTae-Woo Kim; Seong June Jo; Jong-In Song20062006, vol.27, no.9
Resistive Switching Mechanisms of V-Doped SrZrO{sub}3 Memory FilmsChun-Chieh Lin; Bing-Chung Tu; Chao-Cheng Lin; Chen-Hsi Lin; Tseung-Yuen Tseng20062006, vol.27, no.9
Drive-Current Enhancement in Ge n-Channel MOSFET Using Laser Annealing for Source/Drain ActivationQingchun Zhang; Jidong Huang; Nan Wu; Guoxin Chen; Minghui Hong; L. K. Bera; Chunxiang Zhu20062006, vol.27, no.9
Work Function Tuning Via Interface Dipole by Ultrathin Reaction Layers Using AlTa and AlTaN AlloysBei Chen; Rashmi Jha; Veena Misra20062006, vol.27, no.9
Oxide-Nitride Storage Dielectric Formation in a Single-Furnace Process for Trench DRAMYung-Hsien Wu; Ian Chang; Chun-Yao Wang; Tony Kao; Chia-Ming Kuo; Alex Ku20062006, vol.27, no.9
Organic Complementary D Flip-Flops Enabled by Perylene Diimides and PentaceneByungwook Yoo; Ashwin Madgavkar; Brooks A. Jones; Suvid Nadkarni; Antonio Facchetti; Klaus Dimmler; Michael R. Wasielewski; Tobin J. Marks; Ananth Dodabalapur20062006, vol.27, no.9
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