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期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



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2004 2005 2006 2007

2006, vol.27, no.1 2006, vol.27, no.10 2006, vol.27, no.11 2006, vol.27, no.12 2006, vol.27, no.2 2006, vol.27, no.3
2006, vol.27, no.4 2006, vol.27, no.5 2006, vol.27, no.6 2006, vol.27, no.7 2006, vol.27, no.8 2006, vol.27, no.9

题名作者出版年年卷期
Nonalloyed Ohmic Contacts in AlGaN/GaN HEMTs by Ion Implantation With Reduced Activation Annealing TemperatureFelix Recht; L. McCarthy; S. Rajan; A. Chakraborty; C. Poblenz; A. Corrion; J. S. Speck; U. K. Mishra20062006, vol.27, no.4
Current and Voltage Gain in a Monolithic GaAs/AlGaAs TTJ at Room TemperatureC. R. Muller; L. Worschech; D. Spanheimer; A. Forchel20062006, vol.27, no.4
Observation of Surface Charging at the Edge of a Schottky ContactShahriar Sabuktagin; Yong-Tae Moon; Seydi Dogan; A. A. Baski; Hadis Morkoc20062006, vol.27, no.4
Unpassivated High Power Deeply Recessed GaN HEMTs With Fluorine-Plasma Surface TreatmentL. Shen; T. Palacios; C. Poblenz; A. Corrion; A. Chakraborty; N. Fichtenbaum; S. Keller; S. P. Denbaars; J. S. Speck; U. K. Mishra20062006, vol.27, no.4
A New Metal-Ferroelectric PbZr{sub}0.53Ti{sub}0.47O{sub}3-Insulator (Dy{sub}2O{sub}3)-Semiconductor (MFIS) FET for Nonvolatile Memory ApplicationsTrevor Pi-chun Juan; Chung-yuan Chang; Joseph Ya-min Lee20062006, vol.27, no.4
Characteristics of Aligned Carbon Nanofibers for Interconnect Via ApplicationsQuoc Ngo; Alan M. Cassell; Alexander J. Austin; Jun Li; Shoba Krishnan; M. Meyyappan; Gary Y. Yang20062006, vol.27, no.4
Hafnium Titanate Bilayer Structure Multimetal Dielectric nMOSCAPsSe Jong Rhee; Feng Zhu; Hyoung-Sub Kim; Chang Hwan Choi; Chang Yong Kang; Manhong Zhang; Tackhwi Lee; Injo Ok; Siddarth A. Krishnan; Jack C. Lee20062006, vol.27, no.4
Influence of Oxygen Diffusion Through Capping Layers of Low Work Function Metal Gate ElectrodesBei Chen; Rashmi Jha; Heather Lazar; Nivedita Biswas; Jaehoon Lee; Bongmook Lee; Leszek Wielunski; Eric Garfunkel; Veena Misra20062006, vol.27, no.4
Memory Characteristics of MOSFETs With Densely Stacked Silicon Nanocrystal Layers in the Gate Oxide Synthesized by Low-Energy Ion BeamC. Y. Ng; T. P. Chen; L. Ding; S. Fung20062006, vol.27, no.4
Investigation of Intrinsic Dielectric Breakdown Mechanism in Cu/Low-κ Interconnect SystemNam Hwang; Tam Lyn Tan; Cheng Kuo Cheng; Anyan Du; Chee Lip Gan; Kin Leong Pey20062006, vol.27, no.4
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