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期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2002, vol.23, no.1 2002, vol.23, no.10 2002, vol.23, no.11 2002, vol.23, no.12 2002, vol.23, no.2 2002, vol.23, no.3
2002, vol.23, no.4 2002, vol.23, no.5 2002, vol.23, no.6 2002, vol.23, no.7 2002, vol.23, no.8 2002, vol.23, no.9

题名作者出版年年卷期
An integrated 500-V power DMOSFET/antiparallel rectifier device with improved diode reverse recovery characteristicsK. Mondal; R. Natarajan; T. P. Chow20022002, vol.23, no.9
The impact of gate-oxide breakdown on SRAM stabilityR. Rodriguez; J. H. Stathis; B. P. Linder; S. Kowalczyk; C. T. Chuang; R. V. Joshi; G. Northrop; K. Bernstein; A. J. Bhavnagarwala; S. Lombardo20022002, vol.23, no.9
Electrons retention model for localized charge in oxide-nitride-oxide (ONO) dielectricEli Lusky; Yosi Shacham-Diamand; Ilan Bloom; Boaz Eitan20022002, vol.23, no.9
An improved two-frequency method of capacitance measurement for SrTiO{sub}3 as high-k gate dielectricHang-Tiang Lue; Chih-Yi Liu; Tsueng-Yuen Tseng20022002, vol.23, no.9
A thermal activation view of low voltage impact ionization in MOSFETsPin Su; Ken-Ichi Goto; Toshihiro Sugii; Chenming Hu20022002, vol.23, no.9
Simultaneous optimization of short-channel effects and junction capacitance in pMOSFET using large-angle-tilt-implantation of nitrogen (LATIN)Kilho Lee; Cheruvu Murthy; Rajesh Rengarajan; Suryanarayan Hegde; Rajaro Jammy20022002, vol.23, no.9
A new pixel circuit for active matrix organic light emitting diodesJoon-Chul Goh; Hoon-Ju Chung; Jin Jang; Chul-Hi Han20022002, vol.23, no.9
A 4.2-ps ECL ring-oscillator in a 285-GHz f{sub}(MAX) SiGe technologyBasanth Jagannathan; Mounir Meghelli; Alexander V. Rylyakov; Robert A. Groves; Anil K. Chinthakindi; Christopher M. Schnabel; David A. Ahlgren; Gregory G. Freeman; Kenneth J. Stein; Seshadri Subbanna20022002, vol.23, no.9
An ultra-low dark current CMOS image sensor cell using n{sup}+ ring resetHsiu-Yu Cheng; Ya-Chin King20022002, vol.23, no.9
Diffusion and tunneling currents in GaN/InGaN multiple quantum well light-emitting diodesX. A. Cao; E. B. Stokes; P. M. Sandvik; S. F. LeBeouf; J. Kretchmer; D. Walker20022002, vol.23, no.9
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