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期刊

ISSN	0741-3106
刊名	IEEE Electron Device Letters
参考译名	IEEE电子器件快报
收藏年代	1998～2007

全部

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2004	2005	2006	2007

2006, vol.27, no.1	2006, vol.27, no.10	2006, vol.27, no.11	2006, vol.27, no.12	2006, vol.27, no.2	2006, vol.27, no.3
2006, vol.27, no.4	2006, vol.27, no.5	2006, vol.27, no.6	2006, vol.27, no.7	2006, vol.27, no.8	2006, vol.27, no.9

题名

作者

出版年

年卷期

Effect of Ohmic Contacts on Buffer Leakage of GaN Transistors

Y. Dora; A. Chakraborty; S. Heikman; L. McCarthy; S. Keller; S. P. DenBaars; U. K. Mishra

2006

2006, vol.27, no.7

A Novel InGaP/Al{sub}xGa{sub}(1-x)As/GaAs CEHBT

Shiou-Ying Cheng; Kuei-Yi Chu; Li-Yang Chen

2006

2006, vol.27, no.7

Device Linearity Comparison of Uniformly Doped and δ-Doped In{sub}0.52Al{sub}0.48As/In{sub}0.6Ga{sub}0.4As Metamorphic HEMTs

Y. C. Lin; Edward Yi Chang; H. Yamaguchi; Y. Hirayama; X. Y. Chang; C. Y. Chang

2006

2006, vol.27, no.7

Bendability of Single-Crystal Si MOSFETs Investigated on Flexible Substrate

H. Y. Li; L. H. Guo; W. Y. Loh; L. K. Bera; Q. X. Zhang; N. Hwang; E. B. Liao; K. W. Teoh; H. M. Chua; Z. X. Shen; C. K. Cheng; G. Q. Lo; N. Balasubramanian; D.-L. Kwong

2006

2006, vol.27, no.7

Characterization of Pt-Ru Binary Alloy Thin Films for Work Function Tuning

R. M. Todi; A. P. Warren; K. B. Sundaram; K. Barmak; K. R. Coffey

2006

2006, vol.27, no.7

Device Performance of Transistors With High-k Dielectrics Using Cross-Wafer-Scaled Interface-Layer Thickness

B. J. O'Sullivan; V. S. Kaushik; L.-A. Ragnarsson; B. Onsia; N. Van Hoornick; E. Rohr; S. DeGendt; M. Heyns

2006

2006, vol.27, no.7

Characterization of Copper Germanide as Contact Metal for Advanced MOSFETs

Y.-L. Chao; Y. Xu; R. Scholz; J. C. S. Woo