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期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

1999, vol.20, no.1 1999, vol.20, no.10 1999, vol.20, no.11 1999, vol.20, no.12 1999, vol.20, no.2 1999, vol.20, no.3
1999, vol.20, no.4 1999, vol.20, no.5 1999, vol.20, no.6 1999, vol.20, no.7 1999, vol.20, no.8 1999, vol.20, no.9

题名作者出版年年卷期
Threshold voltage dependence of LOCOS-isolated thin-film SOI NMOSFET on buried oxide thicknessJong-Wook Lee; Hyung-Ki Kim; Min-Rok Oh; Yo-Hwan Koh19991999, vol.20, no.9
Surface micromachined solenoid on-Si and on-glass inductors for RF applicationsJun-Bo Yoon; Bon-Kee Kim; Chul-Hi Han; Euisik Yoon; Choong-Ki Kim19991999, vol.20, no.9
Observation of the bistable current-voltage characteristics in the highly doped multi-quantum well heterostructureChung-Kun Song; Do-Hyun Kim19991999, vol.20, no.9
Monte carlo simulation for electron transport in MESFET's including realistic band structure of GaAsYuji Ando; Walter Contrata; Yasuko Hori; Norihiko Samoto19991999, vol.20, no.9
High-frequency dependence of channel noise in short-channel RF MOSFET'sTajinder Manku; Michael Obrecht; Yi Lin19991999, vol.20, no.9
High-field electron velocity in silicon surface-accumulation layersEmil Arnold; Theodore Letavic; Sam Kerko19991999, vol.20, no.9
Gate quality ultrathin (2.5 nm) PECVD deposited oxynitride and nitrided oxide dielectricsEffiong Ibok; Khaled Ahmed; Ming-Yin Hao; Bob Ogle; Jimmie J. Wortman; John R. Hauser19991999, vol.20, no.9
Floating body induced pre-kink excess low-frequency noise in submicron SOI CMOSFET technologyYing-Che Tseng; W. Margaret Huang; Vida Ilderem; Jason C. S. Woo19991999, vol.20, no.9
Evaluation of the temperature stability of AlGaN/GaN heterostructure FET'sI. Daumiller; C. Kirchner; M. Kamp; K. J. Ebeling; E. Kohn19991999, vol.20, no.9
Effects of nitridation pressure on the characteristics of gate dielectrics annealed in N{sub}2O ambientMoon-Sig Joo; In-Seok Yeo; Chan-Ho Lee; Heung-Jae Cho; Se-Aug Jang; Sahng-Kyoo Lee19991999, vol.20, no.9
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