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期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

1999, vol.20, no.1 1999, vol.20, no.10 1999, vol.20, no.11 1999, vol.20, no.12 1999, vol.20, no.2 1999, vol.20, no.3
1999, vol.20, no.4 1999, vol.20, no.5 1999, vol.20, no.6 1999, vol.20, no.7 1999, vol.20, no.8 1999, vol.20, no.9

题名作者出版年年卷期
A leakage current mechanism caused by the interaction of residual oxidation stress and high-energy ion implantation impact in advanced CMOS technologyHyeokjae Lee; Jeong Mo Hwang; Young June Park; Hong Shick Min19991999, vol.20, no.5
A new extrapolation law for data-retention time-to-failure of nonvolatile memoriesB. De Salvo; G. Ghibaudo; G. Pananakakis; B. Guillaumot; P. Canedelier; G. Reimbold19991999, vol.20, no.5
An 0.03-μm gate-length enhancement-mode InAlAs/InGaAs/InP MODFET's with 300 GHz f{sub}T and 2 S/mm extrinsic transconductanceD. Xu; T. Suemitsu; J. Osaka; Y. Umeda; Y. Yamane; Y. Ishii; T. Ishii; T. Tamamura19991999, vol.20, no.5
An electrically modifiable synapse array composed of metal-ferroelectric-semiconductor (MFS) FET's using SrBi{sub}2Ta{sub}2O{sub}9 thin filmsSung-Min Yoon; Eisuke Tokumitsu; Hiroshi Ishiwara19991999, vol.20, no.5
Carrier lifetime extraction in fully depleted dual-gate SOI devicesT. Ernst; A. Vandooren; S. Cristoloveanu; J. -P. Colinge; D. Flandre19991999, vol.20, no.5
Direct ion-implanted 0.12-μm GaAs MESFET with f{sub}t of 121 GHz and f{sub}max of 160 GHzH. Hsia; Z. Tang; D. Caruth; D. Becher; M. Feng19991999, vol.20, no.5
Enhancement of integrity of polysilicon oxide by using a combination of N{sub}2O nitridation and CMP processTan Fu Lei; Jiann Heng Chen; Ming Fang Wang; Tien Sheng Chao19991999, vol.20, no.5
Enhancement of PMOS device performance with poly-SiGe gateWen-Chin Lee; Bryan Watson; Tsu-Jae King; Chenming Hu19991999, vol.20, no.5
Fabrication and characterization of sub-quarter-micron MOSFET's with a copper gate electrodeY. Ma; D. R. Evans; T. Nguyen; Y. Ono; S. T. Hsu19991999, vol.20, no.5
High current density 800-V 4H-SiC gate turn-off thyristorsB. Li; L. Cao; J. H. Zhao19991999, vol.20, no.5
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