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期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2006, vol.27, no.1 2006, vol.27, no.10 2006, vol.27, no.11 2006, vol.27, no.12 2006, vol.27, no.2 2006, vol.27, no.3
2006, vol.27, no.4 2006, vol.27, no.5 2006, vol.27, no.6 2006, vol.27, no.7 2006, vol.27, no.8 2006, vol.27, no.9

题名作者出版年年卷期
A Normally Off GaN n-MOSFET With Schottky-Barrier Source and Drain on a Si-Auto-Doped p-GaN/SiHeon-Bok Lee; Hyun-Ick Gho; Young-Ho Bae; Myoung-Bok Lee; Jung-Hee Lee; Sung-Ho Hahm20062006, vol.27, no.2
Graded Base Type-II InP/GaAsSb DHBT With f{sub}T = 475 GHzWilliam Snodgrass; Bing-Ruey Wu; Walid Hafez; Keh-Yung Cheng; Milton Feng20062006, vol.27, no.2
On the Resolution of the Mechanism for Reverse Gate Leakage in AlGaN/GaN HEMTsShreepad Karmalkar; Naresh Satyan; D. Mahaveer Sathaiya20062006, vol.27, no.2
High Work Function Ir{sub}xSi Gates on HfAlON p-MOSFETsC. H. Wu; D. S. Yu; Albert Chin; S. J. Wang; M.-F. Li; C. Zhu; B. F. Hung; S. P. McAlister20062006, vol.27, no.2
Improved Electrical Performance of Erbium Silicide Schottky Diodes Formed by Pre-RTA Amorphization of SiE. J. Tan; K. L. Pey; D. Z. Chi; P. S. Lee; L. J. Tang20062006, vol.27, no.2
A Small OCA on a 1 × 0.5-mm{sup}2 2.45-GHz RFID Tag - Design and Integration Based on a CMOS-Compatible Manufacturing TechnologyL. H. Guo; A. P. Popov; Y. H. Wang; V. Bliznetsov; G. Q. Lo; N. Balasubramanian; D.-L. Kwong20062006, vol.27, no.2
Modulation of the Workfunction of Ni Fully Silicided Gates by Doping: Dielectric and Silicide Phase EffectsM. A. Pawlak; A. Lauwers; T. Janssens; K. G. Anil; K. Opsomer; K. Maex; A. Vantomme; J. A. Kittl20062006, vol.27, no.2
High-Density CMOS Interconnect Realized on Flexible Organic SubstrateH. Y. Li; N. Hwang; L. H. Guo; Q. X. Zhang; K. W. Teoh; G. Q. Lo; N. Balasubraminian; D.-L. Kwong20062006, vol.27, no.2
The Effect of Dislocation Loops on the Light Emission of Silicon LEDsTu Hoang; Phuong LeMinh; Jisk Holleman; Jurriaan Schmitz20062006, vol.27, no.2
Microwave p-i-n Diodes and Switches Based on 4H-SiCNicolas Camara; Konstantinos Zekentes; Leonid P. Romanov; Aleksey V. Kirillov; Mykola S. Boltovets; Konstantin V. Vassilevski; George Haddad20062006, vol.27, no.2
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