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期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2006, vol.27, no.1 2006, vol.27, no.10 2006, vol.27, no.11 2006, vol.27, no.12 2006, vol.27, no.2 2006, vol.27, no.3
2006, vol.27, no.4 2006, vol.27, no.5 2006, vol.27, no.6 2006, vol.27, no.7 2006, vol.27, no.8 2006, vol.27, no.9

题名作者出版年年卷期
Comparison of AlGaN/GaN MSM Varactor Diodes Based on HFET and MOSHFET Layer StructuresM. Marso; A. Fox; G. Heidelberger; P. Kordos; H. Luth20062006, vol.27, no.12
InGaP/InGaAs Pseudomorphic Heterodoped-Channel FETs With a Field Plate and a Reduced Gate Length by Splitting Gate MetalH. R. Chen; M. K. Hsu; S. Y. Chiu; W. T. Chen; G. H. Chen; Y. C. Chang; W. S. Lour20062006, vol.27, no.12
A Novel Pt/In{sub}0.52Al{sub}0.48As Schottky Diode-Type Hydrogen SensorChing-Wen Hung; Han-Lien Lin; Huey-Ing Chen; Yan-Ying Tsai; Po-Hsien Lai; Ssu-I Fu; Wen-Chau Liu20062006, vol.27, no.12
Bias Voltage Controlled Memory Effect in In-Plane Quantum-Wire Transistors With Embedded Quantum DotsC. R. Muller; L. Worschech; A. Schliemann; A. Forchel20062006, vol.27, no.12
Enhancement-Mode GaAs n-Channel MOSFETKarthik Rajagopalan; Jonathan Abrokwah; Ravi Droopad; Matthias Passlack20062006, vol.27, no.12
Effect of Silicon Thickness on Contact-Etch-Stop-Layer-Induced Silicon/Buried-Oxide Interface Stress for Partially Depleted SOIChien-Ting Lin; Yean-Kuen Fang; Wen-Kuan Yeh; Tung-Hsing Lee; Ming-Shing Chen; Che-Hua Hsu; Liang-Wei Chen; Li-Wei Cheng; Mike Ma20062006, vol.27, no.12
CMOS Integration of Dual Work Function Phase-Controlled Ni Fully Silicided Gates (NMOS:NiSi, PMOS:Ni{sub}2Si, and Ni{sub}31Si{sub}12) on HfSiONJ. A. Kittl; A. Lauwers; A. Veloso; T. Hoffmann; S. Kubicek; M. Niwa; M. J. H. van Dal; M. A. Pawlak; S. Bras; C. Demeurisse; C. Vrancken; P. Absil; S. Biesemans20062006, vol.27, no.12
Millisecond Anneal and Short-Channel Effect Control in Si CMOS Transistor PerformanceC. F. Nieh; K. C. Ku; C. H. Chen; H. Chang; L. T. Wang; L. P. Huang; Y. M. Sheu; C. C. Wang; T. L. Lee; S. C. Chen; M. S. Liang; J. Gong20062006, vol.27, no.12
Plasma-Induced Damage in High-k/Metal Gate Stack Dry EtchMuhammad Mustafa Hussain; Seung-Chul Song; Joel Barnett; Chang Yong Kang; Gabe Gebara; Barry Sassman; Naim Moumen20062006, vol.27, no.12
I-MOS Transistor With an Elevated Silicon-Germanium Impact-Ionization Region for Bandgap EngineeringEng-Huat Toh; Grace Huiqi Wang; Lap Chan; Guo-Qiang Lo; Ganesh Samudra; Yee-Chia Yeo20062006, vol.27, no.12
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