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期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



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2004 2005 2006 2007

2006, vol.27, no.1 2006, vol.27, no.10 2006, vol.27, no.11 2006, vol.27, no.12 2006, vol.27, no.2 2006, vol.27, no.3
2006, vol.27, no.4 2006, vol.27, no.5 2006, vol.27, no.6 2006, vol.27, no.7 2006, vol.27, no.8 2006, vol.27, no.9

题名作者出版年年卷期
Laser-Assisted Processing of VIAs for AlGaN/GaN HEMTs on SiC SubstratesOlaf Kruger; Gerd Schone; Tim Wernicke; Richard Lossy; Armin Liero; Frank Schnieder; Joachim Wurfl; Gunther Trankle20062006, vol.27, no.6
High-Performance E-Mode AlGaN/GaN HEMTsT. Palacios; C.-S. Suh; A. Chakraborty; S. Keller; S. P. DenBaars; U. K. Mishra20062006, vol.27, no.6
A New Compact Model for the Avalanche Effect in InAlAs/InGaAs HBTsOliver Weiss; Peter Baureis; Nikolai Kellmann; Norbert Weber; Robert Weigel20062006, vol.27, no.6
ScN{sub}x Gate on Atomic Layer Deposited HfO{sub}2 and Effect of High-Pressure Wet Post Deposition AnnealingHyundoek Yang; Dongsoo Lee; M. S. Rahman; M. Hasan; Hyung-Seok Jung; Hyunsang Hwang20062006, vol.27, no.6
Improved Electrical Properties of Germanium MOS Capacitors With Gate Dielectric Grown in Wet-NO AmbientJ. P. Xu; P. T. Lai; C. X. Li; X. Zou; C. L. Chan20062006, vol.27, no.6
Enhancing Leakage Suppression in Carbon-Rich Silicon JunctionsChung Foong Tan; Eng Fong Chor; Hyeokjae Lee; Elgin Quek; Lap Chan20062006, vol.27, no.6
Sb-Se-Based Phase-Change Memory Device With Lower Power and Higher Speed OperationsSung-Min Yoon; Nam-Yeal Lee; Sang-Ouk Ryu; Kyu-Jeong Choi; Young-Sam Park; Seung-Yun Lee; Byoung-Gon Yu; Myung-Jin Kang; Se-Young Choi; Matthis Wuttig20062006, vol.27, no.6
Effect of Deposition Chemistry and Annealing on Charge in HfO{sub}2 StacksZhihong Zhang; Stephen A. Campbell20062006, vol.27, no.6
Charge-Transport Characteristics in Bistable Resistive Poly(N-Vinylcarbazole) FilmsYi-Sheng Lai; Chia-Hsun Tu; Dim-Lee Kwong; J. S. Chen20062006, vol.27, no.6
HfAlON n-MOSFETs Incorporating Low-Work Function Gate Using Ytterbium SilicideC. H. Wu; B. F. Hung; Albert Chin; S. J. Wang; F. Y. Yen; Y. T. Hou; Y. Jin; H. J. Tao; S. C. Chen; M. S. Liang20062006, vol.27, no.6
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