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期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2007, vol.28, no.1 2007, vol.28, no.10 2007, vol.28, no.11 2007, vol.28, no.12 2007, vol.28, no.2 2007, vol.28, no.3
2007, vol.28, no.4 2007, vol.28, no.5 2007, vol.28, no.6 2007, vol.28, no.7 2007, vol.28, no.8 2007, vol.28, no.9

题名作者出版年年卷期
Wide V{sub}(fb) and V{sub}(th) Tunability for Metal-Gated MOS Devices With HfLaO Gate DielectricsX. P. Wang; H. Y. Yu; M.-F. Li; C. X. Zhu; S. Biesemans; Albert Chin; Y. Y. Sun; Y. P. Feng; Andy Lim; Yee-Chia Yeo; Wei Yip Loh; G. Q. Lo; Dim-Lee Kwong20072007, vol.28, no.4
Room-Temperature Deposited Titanium Silicate Thin Films for MIM Capacitor ApplicationsD. Brassard; L. Ouellet; M. A. El Khakani20072007, vol.28, no.4
AlGaN Photodetectors Prepared on Si SubstratesY. Z. Chiou; Y. C. Lin; C. K. Wang20072007, vol.28, no.4
Impact of Channel Dangling Bonds on Reliability Characteristics of Flash Memory on Poly-Si Thin FilmsYu-Hsien Lin; Chao-Hsin Chien; Tung-Huan Chou; Tien-Sheng Chao; Tan-Fu Lei20072007, vol.28, no.4
On the Use of a SiGe Spike in the Emitter to Improve the f{sub}TxBV{sub}(CEO) Product of High-Speed SiGe HBTsL. J. Choi; S. Van Huylenbroeck; A. Piontek; A. Sibaja-Hernandez; E. Kunnen; P. Meunier-Beillard; W. D. van Noort; E. Hijzen; S. Decoutere20072007, vol.28, no.4
Fast Thin-Film Transistor Circuits Based on Amorphous Oxide SemiconductorMasato Ofuji; Katsumi Abe; Hisae Shimizu; Nobuyuki Kaji; Ryo Hayashi; Masafumi Sano; Hideya Kumomi; Kenji Nomura; Toshio Kamiya; Hideo Hosono20072007, vol.28, no.4
New Operating Mode Based on Electron/Hole Profile Matching in Nitride-Based Nonvolatile MemoriesA. Furnemont; M. Rosmeulen; K. van der Zanden; J. Van Houdt; K. De Meyer; H. Maes20072007, vol.28, no.4
Accurate Series-Resistance Extraction From Capacitor Using Time Domain ReflectometryY. Wang; K. P. Cheung; R. Choi; G. A. Brown; B.-H. Lee20072007, vol.28, no.4
A Graphene Field-Effect DeviceMax C. Lemme; Tim J. Echtermeyer; Matthias Baus; Heinrich Kurz20072007, vol.28, no.4
Electron Transport in Strained-Silicon Directly on Insulator Ultrathin-Body n-MOSFETs With Body Thickness Ranging From 2 to 25 nmLeonardo Gomez; I. Aberg; J. L. Hoyt20072007, vol.28, no.4
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