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期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2007, vol.28, no.1 2007, vol.28, no.10 2007, vol.28, no.11 2007, vol.28, no.12 2007, vol.28, no.2 2007, vol.28, no.3
2007, vol.28, no.4 2007, vol.28, no.5 2007, vol.28, no.6 2007, vol.28, no.7 2007, vol.28, no.8 2007, vol.28, no.9

题名作者出版年年卷期
Effect of Gate Sinking on the Device Performance of the InGaP/AlGaAs/InGaAs Enhancement-Mode PHEMTL. H. Chu; E. Y. Chang; L. Chang; Y. H. Wu; S. H. Chen; H. T. Hsu; T. L. Lee; Y. C. Lien; C. Y. Chang20072007, vol.28, no.2
Time-Resolved Temperature Measurement of AlGaN/GaN Electronic Devices Using Micro-Raman SpectroscopyM. Kuball; G. J. Riedel; J. W. Pomeroy; A. Sarua; M. J. Uren; T. Martin; K. P. Hilton; J. O. Maclean; D. J. Wallis20072007, vol.28, no.2
SAW Filters Composed of Interdigital Schottky and Ohmic Contacts on AlGaN/GaN HeterostructuresNaoteru Shigekawa; Kazumi Nishimura; Tetsuya Suemitsu; Haruki Yokoyama; Kohji Hohkawa20072007, vol.28, no.2
Fabrication of 0.15-μm Γ-Shaped Gate In{sub}0.52Al{sub}0.48As/In{sub}0.6Ga{sub}0.4As Metamorphic HEMTs Using DUV Lithography and Tilt Dry-Etching TechniqueYi-Chung Lien; Szu-Hung Chen; Edward Yi Chang; Ching-Ting Lee; Li-Hsin Chu; Chia-Yuan Chang20072007, vol.28, no.2
A Novel Dilute Antimony Channel In{sub}0.2Ga{sub}0.8AsSb/GaAs HEMTKe-Hua Su; Wei-Chou Hsu; Ching-Sung Lee; Tsung-Yeh Wu; Yue-Han Wu; Li Chang; Ru-Shang Hsiao; Jenn-Fang Chen; Tung-Wei Chi20072007, vol.28, no.2
1-μm Enhancement Mode GaAs N-Channel MOSFETs With Transconductance Exceeding 250 mS/mmK. Rajagopalan; R. Droopad; J. Abrokwah; P. Zurcher; P. Fejes; M. Passlack20072007, vol.28, no.2
Fermi-Level Pinning in Nanocrystal MemoriesTuo-Hung Hou; Udayan Ganguly; Edwin C. Kan20072007, vol.28, no.2
Electrically Bistable Thin-Film Device Based on PVK and GNPs Polymer MaterialY. Song; Q. D. Ling; S. L. Lim; E. Y. H. Teo; Y. P. Tan; L. Li; E. T. Kang; D. S. H. Chan; Chunxiang Zhu20072007, vol.28, no.2
A Novel Strain Method for Enhancement of 90-nm Node and Beyond FUSI-Gated CMOS PerformanceChien-Ting Lin; Yean-Kuen Fang; Wen-Kuan Yen; Tung-Hsing Lee; Ming-Shing Chen; Chieh-Ming Lai; Che-Hua Hsu; Liang-Wei Chen; Li-Wei Cheng; Mike Ma20072007, vol.28, no.2
Application of Plasma-Doping (PLAD) Technique to Reduce Dark Current of CMOS Image SensorsChang-Rok Moon; Jongwan Jung; Doo-Won Kwon; Jongryeol Yoo; Duck-Hyung Lee; Kinam Kim20072007, vol.28, no.2
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