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期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2007, vol.28, no.1 2007, vol.28, no.10 2007, vol.28, no.11 2007, vol.28, no.12 2007, vol.28, no.2 2007, vol.28, no.3
2007, vol.28, no.4 2007, vol.28, no.5 2007, vol.28, no.6 2007, vol.28, no.7 2007, vol.28, no.8 2007, vol.28, no.9

题名作者出版年年卷期
An Unassisted, Low Trigger-, and High Holding-Voltage SCR (uSCR) for On-Chip ESD-Protection ApplicationsLifang Lou; Juin J. Liou20072007, vol.28, no.12
HfLaON n-MOSFETs Using a Low Work Function HfSi{sub}x GateC. F. Cheng; C. H. Wu; N. C. Su; S. J. Wang; S. P. McAlister; Albert Chin20072007, vol.28, no.12
The Effect of an Yttrium Interlayer on a Ni Germanided Metal Gate Workfunction in SiO{sub}2/HfO{sub}2H. P. Yu; K. L. Pey; W. K. Choi; M. K. Dawood; H. G. Chew; D. A. Antoniadis; E. A. Fitzgerald; D. Z. Chi20072007, vol.28, no.12
Improved High-Temperature Leakage in High-Density MIM Capacitors by Using a TiLaO Dielectric and an Ir ElectrodeC. H. Cheng; H. C. Pan; H. J. Yang; C. N. Hsiao; C. P. Chou; S. P. McAlister; Albert Chin20072007, vol.28, no.12
Effective Work-Function Modulation by Aluminum-Ion Implantation for Metal-Gate Technology (Poly-Si/TiN/SiO{sub}2)R. Singanamalla; H. Y. Yu; B. Van Daele; S. Kubicek; K. De Meyer20072007, vol.28, no.12
Effect of a Two-Step Recess Process Using Atomic Layer Etching on the Performance of In{sub}0.52Al{sub}0.48As/In{sub}0.53Ga{sub}0.47As p-HEMTsTae-Woo Kim; Dae-Hyun Kim; Sang Duk Park; Geun Young Yeom; Byeong Ok Lim; Jin-Koo Rhee; Jae-Hyung Jang; Jong-In Song20072007, vol.28, no.12
Normally Off n-Channel GaN MOSFETs on Si Substrates Using an SAG Technique and Ion ImplantationHiroshi Kambayashi; Yuki Niiyama; Shinya Ootomo; Takehiko Nomura; Masayuki Iwami; Yoshihiro Satoh; Sadahiro Kato; Seikoh Yoshida20072007, vol.28, no.12
High-Gain Low Turn-On Voltage AlGaAs/GaAsNSb/GaAs Heterojunction Bipolar Transistors Grown by Molecular Beam EpitaxyK. L. Lew; S. F. Yoon; H. Wang; S. Wicaksono; J. A. Gupta; S. P. McAlister20072007, vol.28, no.12
Enhancement-Mode GaAs MOSFETs With an In{sub}0.3Ga{sub}0.7As Channel, a Mobility of Over 5000 cm{sup}2/V·s, and Transconductance of Over 475 μS/μmRichard J. W. Hill; David A. J. Moran; Xu Li; Haiping Zhou; Douglas Macintyre; Stephen Thoms; Asen Asenov; Peter Zurcher; Karthik Rajagopalan; Jonathan Abrokwah; Ravi Droopad; Matthias Passlack; Iain G. Thayne20072007, vol.28, no.12
Effective Schottky Barrier Height Reduction Using Sulfur or Selenium at the NiSi/n-Si (100) Interface for Low Resistance ContactsHoong-Shing Wong; Lap Chan; Ganesh Samudra; Yee-Chia Yeo20072007, vol.28, no.12
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