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期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2007, vol.28, no.1 2007, vol.28, no.10 2007, vol.28, no.11 2007, vol.28, no.12 2007, vol.28, no.2 2007, vol.28, no.3
2007, vol.28, no.4 2007, vol.28, no.5 2007, vol.28, no.6 2007, vol.28, no.7 2007, vol.28, no.8 2007, vol.28, no.9

题名作者出版年年卷期
Normally Off AlGaN/GaN Low-Density Drain HEMT (LDD-HEMT) With Enhanced Breakdown Voltage and Reduced Current CollapseDi Song; Jie Liu; Zhiqun Cheng; Wilson C. W. Tang; Kei May Lau; Kevin J. Chen20072007, vol.28, no.3
Selectively Doped High-Power AlGaN/InGaN/GaN MOS-DHFETV. Adivarahan; M. Gaevski; A. Koudymov; J. Yang; G. Simin; M. Asif Khan20072007, vol.28, no.3
Fluorine Passivation in Gate Stacks of Poly-Si/TaN/HfO{sub}2 (and HfSiON/HfO{sub}2)/Si Through Gate Ion ImplantationM. H. Zhang; F. Zhu; H. S. Kim; I. J. Ok; Jack C. Lee20072007, vol.28, no.3
Arsenic Junction Thermal Stability and High-Dose Boron-Pocket Activation During SPER in nMOS TransistorsS. Severi; B. J. Pawlak; R. Duffy; E. Augendre; K. Henson; R. Lindsay; K. De Meyer20072007, vol.28, no.3
Effective Work Function Engineering of Ta{sub}xC{sub}y Metal Gate on Hf-based DielectricsF. Y. Yen; C. L. Hung; Y. T. Hou; P. F. Hsu; V. S. Chang; P. S. Lim; L. G. Yao; J. C. Jiang; H. J. Lin; C. C. Chen; Y. Jin; S. M. Jang; H. J. Tao; S. C. Chen; M. S. Liang20072007, vol.28, no.3
Admittance Measurements on OFET Channel and Its Modeling With R-C NetworkKeum-Dong Jung; Cheon An Lee; Dong-Wook Park; Byung-Gook Park; Hyungcheol Shin; Jong Duk Lee20072007, vol.28, no.3
The Preparation of Nanocrystalline Silicon by Plasma-Enhanced Hydrogenation for the Fabrication of Light-Emitting DiodesM. Jamei; F. Karbassian; S. Mohajerzadeh; Y. Abdi; M. D. Robertson; S. Yuill20072007, vol.28, no.3
Vertically Stacked SiGe Nanowire Array Channel CMOS TransistorsW. W. Fang; N. Singh; L. K. Bera; H. S. Nguyen; S. C. Rustagi; G. Q. Lo; N. Balasubramanian; D.-L. Kwong20072007, vol.28, no.3
Highly Reliable Multilevel and 2-bit/cell Operation of Wrapped Select Gate (WSG) SONOS MemoryWoei-Cherng Wu; Tien-Sheng Chao; Wu-Chin Peng; Wen-Luh Yang; Jer-Chyi Wang; Jian-Hao Chen; Chao-Sung Lai; Tsung-Yu Yang; Chien-Hsing Lee; Tsung-Min Hsieh; Jhyy Cheng Liou20072007, vol.28, no.3
Demonstration of Asymmetric Gate-Oxide Thickness Four-Terminal FinFETs Having Flexible Threshold Voltage and Good Subthreshold SlopeMeishoku Masahara; Radu Surdeanu; Liesbeth Witters; Gerben Doornbos; Viet H. Nguyen; Geert Van den bosch; Christa Vrancken; Katia Devriendt; Francois Neuilly; Eddy Kunnen; Malgorzata Jurczak; Serge Biesemans20072007, vol.28, no.3
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