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期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2002, vol.23, no.1 2002, vol.23, no.10 2002, vol.23, no.11 2002, vol.23, no.12 2002, vol.23, no.2 2002, vol.23, no.3
2002, vol.23, no.4 2002, vol.23, no.5 2002, vol.23, no.6 2002, vol.23, no.7 2002, vol.23, no.8 2002, vol.23, no.9

题名作者出版年年卷期
High-performance InP/In{sub}0.53Ga{sub}0.47As/InP double HBTs on GaAs substratesY. M. Kim; M. Dahlstrom S. Lee; M. J. W. Rodwell; A. C. Gossard20022002, vol.23, no.6
GaAs MESFETs fabricated Si substrates using a SrTiO{sub}3 buffer layerK. Eisenbeiser; R. Emrick; R. Droopad; Z. Yu; J. Finder; S. Rockwell; J. Holmes; C. Overgaard; W. Ooms20022002, vol.23, no.6
Physics-based modeling of submicron GaN permeable base transistorsVittorio Camarchia; Enrico Bellotti; Michele Goano; Giovanni Ghione20022002, vol.23, no.6
Effect of p-doped overlayer thickness on RF-dispersion in GaN Junction FETsA. Jimenez; D. Buttari; D. Jena; R. Coffie; S. Heikman; N. Q. Zhang; L. Shen; E. Calleja; E. Munoz; J. Speck; U. K. Mishra20022002, vol.23, no.6
The impact of plasma-charging damage on the RF performance of deep-submicron MOSFETLuigi Pantisano; K. P. Cheung; Philippe J. Roussel; Alessandro Paccagnella20022002, vol.23, no.6
STI stress-induced increase in reverse bias junction capacitanceVenkatesh P. Gopinath; Helmut Puchner; Mohammad Mirabedini20022002, vol.23, no.6
A poly-Si TFT fabricated by excimer laser recrystallization on floating active structureCheon-Hong Kim; In-Hyuk Song; Woo-Jin Nam; Min-Koo Han20022002, vol.23, no.6
Inductive switching of 4H-SiC gate turn-off thyristorsS. B. Bayne; C. W. Tipton; T. Griffin; C. J. Scozzie; B. Geil; A. K. Agarwal; J. Richmond20022002, vol.23, no.6
10 A, 2.4 kV power DiMOSFETs in 4H-SiCSei-Hyung Ryu; Anant Agarwal; James Richmond; John Palmour; Nelson Saks; John Williams20022002, vol.23, no.6
Copper gate hydrogenated amorphous silicon TFT with thin buffer layersSang Wook Lee; Kyu Sik Cho; Byung Kwon Choo; Jin Jang20022002, vol.23, no.6
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