长垣产业园区科技文献服务平台

期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2002, vol.23, no.1 2002, vol.23, no.10 2002, vol.23, no.11 2002, vol.23, no.12 2002, vol.23, no.2 2002, vol.23, no.3
2002, vol.23, no.4 2002, vol.23, no.5 2002, vol.23, no.6 2002, vol.23, no.7 2002, vol.23, no.8 2002, vol.23, no.9

题名作者出版年年卷期
Super low noise InGaP gated PHEMTH. K. Huang; Y. H. Wang; C. L. Wu; J. C. Wang; C. S. Chang20022002, vol.23, no.2
0.12 μm transferred-substrate In{sub}0.52Al{sub}0.48As/In{sub}0.53Ga{sub}0.47As HEMTs on silicon waferS. Bollaert; X. Wallaert; S. Lepilliet; A. Cappy; E. Jalaguier; S. Pocas; B. Aspar20022002, vol.23, no.2
Systematic characterization of Cl{sub}2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTsD. Buttari; A. Chini; G. Meneghesso; E. Zanoni; B. Moran; S. Heikman; N. Q. Zhang; L. Shen; R. Coffie; S. P. DenBaars; U. K. Mishra20022002, vol.23, no.2
Positive flatband voltage shift in MOS capacitors on n-type GaNK. Matocha; T. P. Chow; R. J. Gutmann20022002, vol.23, no.2
Ferroelectric DRAM (FEDRAM) FET with metal/SrBi{sub}2Ta{sub}2O{sub}9/SiN/Si gate structureKwang-Ho Kim; Jin-Ping Han; Soon-Won Jung; Tso-Ping Ma20022002, vol.23, no.2
A capacitor-less 1T-DRAM cellS. Okhonin; M. Nagoga; J. M. Sallese; P. Fazan20022002, vol.23, no.2
The injection efficiency controlled IGBTS. Huang; G. A. J. Amaratunga; F. Udrea20022002, vol.23, no.2
JVD silicon nitride as tunnel dielectric in p-channel flash memoryMin She; Tsu-Jae King; Chenming Hu; Wenjuan Zhu; Zhijiong Luo; Jin-Ping Han; Tso-Ping Ma20022002, vol.23, no.2
Three level charge pumping on a single interface trapLiviu Militaru; Pascal Masson; Georges Guegan20022002, vol.23, no.2
Current transport in metal/hafnium oxide/silicon structureW. J. Zhu; Tso-Ping Ma; Takashi Tamagawa; J. Kim; Y. Di20022002, vol.23, no.2
12



国家科技图书文献中心  全球文献资源网  京ICP备05055788号-26  机械工业信息研究院 2018-2024