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期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2002, vol.23, no.1 2002, vol.23, no.10 2002, vol.23, no.11 2002, vol.23, no.12 2002, vol.23, no.2 2002, vol.23, no.3
2002, vol.23, no.4 2002, vol.23, no.5 2002, vol.23, no.6 2002, vol.23, no.7 2002, vol.23, no.8 2002, vol.23, no.9

题名作者出版年年卷期
Low-frequency noise characteristics of p-n-p InAlAs/InGaAs HBTsShawn S. H. Hsu; Dimitris Pavlidis; Donald Sawdai20022002, vol.23, no.12
Submicron AlGaN/GaN HEMTs with very high drain current density grown by plasma-assisted MBE on 6H-SiCNils G. Weimann; Michael J. Manfra; Subhasish Chakraborty; Donald M. Tennant20022002, vol.23, no.12
Over 300 GHz f{sub}T and f{sub}(max) InP/InGaAs double heterojunction bipolar transistors with a thin pseudomorphic baseMinoru Ida; Kenji Kurishima; Noriyuki Watanabe20022002, vol.23, no.12
High-performance In{sub}0.53Ga{sub}0.47As thermophotovoltaic devices grown by solid source molecular beam epitaxyM. K. Hudait; C. L. Andre; O. Kwon; M. N. Palmisiano; S. A. Ringel20022002, vol.23, no.12
A concise process technology for 3-D suspended radio frequency micro-inductors on silicon substrateYung C. Liang; Wenjiang Zeng; Pick Hong Ong; Zhaoxia Gao; Jun Cai; N. Balasubramanian20022002, vol.23, no.12
Ultra-thin decoupled plasma nitridation (DPN) oxynitride gate dielectric for 80-nm advanced technologyH. -H. Tseng; Y. Jeon; P. Abramowitz; T. -Y. Luo; I. Hebert; J. J. Lee; J. Jiang; P. J. Tobin; G. C. F. Yeap; M. Moosa; J. Alvis; S. G. H. Anderson; N. Cave; T. C. Chua; A. Hegedus; G. Miner; J. Jeon; A. Sultan20022002, vol.23, no.12
Improvement in electrical characteristics of ultrathin thermally grown SiO{sub}2 by selective anodic oxidationRoy Paily; Amitava DasGupta; Nandita DasGupta20022002, vol.23, no.12
La{sub}2O{sub}3/Si{sub}0.3Ge{sub}0.7 p-MOSFETs with high hole mobility and good device characteristicsC. H. Huang; S. B. Chen; Albert Chin20022002, vol.23, no.12
Record Q symmetrical inductors for 10-GHz LC-VCOs in 0.18-μm gate-length CMOSL. F. Tiemeijer; R. J. Havens; N. Pavlovic; D. M. W. Leenaerts20022002, vol.23, no.12
Heating effects of clock drivers in bulk, SOI, and 3-D CMOSChristianto C. Liu; Jifeng Zhang; Ashim K. Datta; Sandip Tiwari20022002, vol.23, no.12
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