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期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2002, vol.23, no.1 2002, vol.23, no.10 2002, vol.23, no.11 2002, vol.23, no.12 2002, vol.23, no.2 2002, vol.23, no.3
2002, vol.23, no.4 2002, vol.23, no.5 2002, vol.23, no.6 2002, vol.23, no.7 2002, vol.23, no.8 2002, vol.23, no.9

题名作者出版年年卷期
A planarized shallow-trench-isolation for GaAs devices fabrication using liquid phase chemical enhanced oxidation processJau-Yi Wu; Hwei-Heng Wang; Po-Wen Sze; Yeong-Her Wang; Mau-Phon Houng20022002, vol.23, no.5
InGaN/GaN light emitting diodes activated in O{sub}2 ambientC. H. Kuo; S. J. Chang; Y. K. Su; J. F. Chen; L. W. Wu; J. K. Sheu; C. H. Chen; G. C. Chi20022002, vol.23, no.5
Enhanced power performance of enhancement-mode Al{sub}0.5Ga{sub}0.5As/In{sub}0.15Ga{sub}0.85As pHEMTs using a low-k BCB passivationHsien-Chin Chiu; Ming-Jyh Hwu; Shih-Cheng Yang; Yi-Jen Chan20022002, vol.23, no.5
Load impedance influence on the 1{sub}D (V{sub}(DS)) characteristics of AlGaN/GaN HEMTs in large signal regime at 4 GHzN. Vellas; C. Gaquiere; F. Bue; Y. Guhel; B. Boudart; J. C. de Jaeger; M. A. Poisson20022002, vol.23, no.5
Structural and electrical properties of HfO{sub}2 with top nitrogen incorporated layerHag-Ju Cho; Chang Seok Kang; Katsunori Onishi; Sundar Gopalan; Renee Nieh; Rino Choi; Siddarth Krishnan; Jack C. Lee20022002, vol.23, no.5
An early detection method of device burn-in failure caused by tungsten side-diffusion through seam in premetal dielectric filmSang-Yun Lee; Jeong Choi; Sean Chen; Wen-Shu Liu; Ken McAllister20022002, vol.23, no.5
Anomalous variations of OFF-state leakage current in poly-Si TFT under static stressKow Ming Chang; Yuan Hung Chung; Gin Ming Lin20022002, vol.23, no.5
Self-aligned SiGe NPN transistors with 285 GHz f{sub}(MAX) and 207 GHz f{sub}T in a manufacturable technologyB. Jagannathan; M. Khater; F. Pagette; J. S. Rieh; D. Angell; H. Chen; J. Florkey; F. Golan; D. R. Greenberg; R. Groves; S. J. Jeng; J. Johnson; E. Mengistu; K. T. Schonenberg; C. M. Schnabel; P. Smith; A. Stricker; D. Ahlgren; G. Freeman; K. Stein20022002, vol.23, no.5
A high-performance five-channel NMOSFET using selective epitaxial growth and lateral solid phase epitaxyMahender Kumar; Haitao Liu; Johnny K. O. Sin20022002, vol.23, no.5
Effects of floating-gate interference on NAND flash memory cell operationJae-Duk Lee; Sung-Hoi Hur; Jung-Dal Choi20022002, vol.23, no.5
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