长垣产业园区科技文献服务平台

期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2002, vol.23, no.1 2002, vol.23, no.10 2002, vol.23, no.11 2002, vol.23, no.12 2002, vol.23, no.2 2002, vol.23, no.3
2002, vol.23, no.4 2002, vol.23, no.5 2002, vol.23, no.6 2002, vol.23, no.7 2002, vol.23, no.8 2002, vol.23, no.9

题名作者出版年年卷期
Improved device linearity of AlGaAs/InGaAs HFETs by a second mesa etchingHsien-Chin Chiu; Shih-Cheng Yang; Feng-Tso Chien; Yi-Jen Chan20022002, vol.23, no.1
AlGaN/GaN HEMTs on (111) silicon substratesP. Javorka; A. Alam; M. Wolter; A. Fox; M. Marso; M. Heuken; H. Luth; P. Kordos20022002, vol.23, no.1
Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopyM. Kuball; J. M. Hayes; M. J. Uren; T. Martin; J. C. H. Birbeck; R. S. Balmer; B. T. Hughes20022002, vol.23, no.1
Field emission characteristics of CoSi{sub}2/TaN-coated silicon emitter tipsByung Wook Han; Jae Sin Lee; Byung Tae Ahn20022002, vol.23, no.1
Excellent effects of hydrogen postoxidation annealing on inversion channel mobility of 4H-SiC MOSFET fabricated on (1120) faceJunji Senzaki; Kazutoshi Kojima; Shinsuke Harada; Ryoji Kosugi; Seiji Suzuki; Takaya Suzuki; Kenji Fukuda20022002, vol.23, no.1
High-voltage implanted-emitter 4H-SiC BJTsYi Tang; Jefferey B. Fedison; T. Paul Chow20022002, vol.23, no.1
Ge-profile design for improved linearity of SiGe double HBTsB. Gunnar Malm; Mikael Ostling20022002, vol.23, no.1
Impact of gate-poly grain structure on the gate-oxide reliabilityAvid Kamgar; H. M. Vaidya; F. H. Baumann; S. Nakahara20022002, vol.23, no.1
Nanoscale CMOS spacer FinFET for the terabit eraYang-Kyu Choi; Tsu-Jae King; Chenming Hu20022002, vol.23, no.1
Reduction in leakage current of low-temperature thin-gate oxide by repeated spike oxidation techniqueChao-Chi Hong; Chang-Yun Chang; Chaung-Yuan Lee; Jenn-Gwo Hwu20022002, vol.23, no.1
12



国家科技图书文献中心  全球文献资源网  京ICP备05055788号-26  机械工业信息研究院 2018-2024