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期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998~2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2002, vol.23, no.1 2002, vol.23, no.10 2002, vol.23, no.11 2002, vol.23, no.12 2002, vol.23, no.2 2002, vol.23, no.3
2002, vol.23, no.4 2002, vol.23, no.5 2002, vol.23, no.6 2002, vol.23, no.7 2002, vol.23, no.8 2002, vol.23, no.9

题名作者出版年年卷期
Microwave noise performance of AlGaN-GaN HEMTs with small DC power dissipationJ. S. Moon; M. Micovic; A. Kurdoghlian; P. Janke; P. Hashimoto; W. -S. Wong; L. McCray; C. Nguyen20022002, vol.23, no.11
A new Pt/oxide/In{sub}0.49Ga{sub}0.51P MOS Schottky diode hydrogen sensorWen-Chau Liu; Kun-Wei Lin; Huey-Ing Chen; Chih-Kai Wang; Chin-Chuan Cheng; Shiou-Ying Cheng; Chun-Tsen Lu20022002, vol.23, no.11
Improvement of electrical and reliability properties of tantalum pentoxide by high-density plasma (HDP) annealing in N{sub}OS. J. Chang; J. S. Lee; J. F. Chen; S. C. Sun; C. H. Liu; U. H. Liaw; B. R. Huang20022002, vol.23, no.11
Boron retarded diffusion in the presence of indium or germaniumHong-Jyh Li; Taras A. Kirichenko; Puneet Kohli; Sanjay K. Banerjee; Eric Graetz; Robin Tichy; Peter Zeitzoff20022002, vol.23, no.11
Effect of Al inclusion in HfO[sub}2 on the physical and electrical properties of the dielectricsW. J. Zhu; T. Tamagawa; M. Gibson; T. Furukawa; T. P. Ma20022002, vol.23, no.11
Novel self-convergent programming method using source-induced band-to-band hot electron injectionLiyang Pan; Jun Zhu; Zhihong Liu; Ying Zeng; Jianzhao Liu20022002, vol.23, no.11
Ballistic MOSFET reproduces current-voltage characteristics of an experimental deviceKenji Natori20022002, vol.23, no.11
Extraction of Si-SiO{sub}2 interface trap densities in MOS structures with ultrathin oxidesDaniel Bauza20022002, vol.23, no.11
Voltage dependence of hard breakdown growth and the reliability implication in thin dielectricsBarry P. Linder; Salvatore Lombardo; James H. Stathis; Alex Vayshenker; David J. Frank20022002, vol.23, no.11
Multilevel vertical-channel SONOS nonvolatile memory on SOIYong Kyu Lee; Jae Sung Sim; Suk Kang Sung; Chang Ju Lee; Tae Hun Kim; Jong Duk Lee; Byung Gook Park; Dong Hun Lee; Young Wug Kim20022002, vol.23, no.11
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