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期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：硅器件和材料
收藏年代2000～2023



全部

2000 2001 2002 2009 2013 2014
2015 2017 2020 2021 2022 2023

2001, vol.101, no.107 2001, vol.101, no.108 2001, vol.101, no.246 2001, vol.101, no.247 2001, vol.101, no.320 2001, vol.101, no.321
2001, vol.101, no.350 2001, vol.101, no.430 2001, vol.101, no.515 2001, vol.101, no.571 2001, vol.101, no.573 2001, vol.101, no.718
2001, vol.101, no.719

题名作者出版年年卷期
Preparation and characterization of a-and b-axes-oriented epitaxially grownTakayuki Watanabe; Hiroshi Isa; Atsushi Sasaki; Mamoru Yoshimoto; Minoru Osada; Yuji Noguchi; Masaru Miyayama; Keisuke Saito; Toshimasa Suzuki; Masayuki Fujimoto; Hiroshi Funakubo20012001, vol.101, no.718
New PZT crystallization technique by using flash lamp for FeRAM devicesKoji Yamakawa; Keitaro Imai; Osamu Arisumi; Tsunetoshi Arikado; Masaki Yoshioka; Tatsushi Owada; Katsuya Okumura20012001, vol.101, no.718
Low temperature growth of PZT thin films by MOCVD and effects of seedingMamuro Okaniwa; Hironori Fujisawa; Masaru Shimizu; Hirohiko Niu20012001, vol.101, no.718
Low coercive field of SrBi{sub}2Ta{sub}2O{sub}9 by La-substitution and vacancy introduction - control of ferroelectric properties through defect engineeringMasaru Miyayama; Yuji Noguchi20012001, vol.101, no.718
Change of MFIS characteristics of Bi{sub}4Ti{sub}3O{sub}12 thin film compositionsMasaki Yamaguchi; Takao Nagatomo; Yoichiro Masuda20012001, vol.101, no.718
Characterization of metal-ferroelectric-metal-insulator-semiconductor (MFMIS) structures using (Bi,La){sub}4Ti{{sub}3O{sub}12 and high capacitance buffer layersTakuya Suzuki; Eisuke Tokumitsu20012001, vol.101, no.718
1T2C-type ferroelectric memorySatoru Ogasawara; Hiroshi Ishiwara20012001, vol.101, no.718
Trends of embedded FRAM technologySeigen Otani; Tooru Endo20012001, vol.101, no.718



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