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期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：硅器件和材料
收藏年代2000～2023



全部

2000 2001 2002 2009 2013 2014
2015 2017 2020 2021 2022 2023

2001, vol.101, no.107 2001, vol.101, no.108 2001, vol.101, no.246 2001, vol.101, no.247 2001, vol.101, no.320 2001, vol.101, no.321
2001, vol.101, no.350 2001, vol.101, no.430 2001, vol.101, no.515 2001, vol.101, no.571 2001, vol.101, no.573 2001, vol.101, no.718
2001, vol.101, no.719

题名作者出版年年卷期
Technology for high-speed and low-power microprocessorsKunio Uchiyama; Takayuki Kawahara; Takehiro Shimizu; Masayuki Miyazaki; Hiroyuki Mizuno20012001, vol.101, no.247
A 0.9-μA standby current DSP core using improved ABC-MT-CMOS circuitHiromi Notani; Masayuki Koyama; Ryuji Mano; Hiroshi Makino; Yoshio Matsuda20012001, vol.101, no.247
Design methodology of high performance microprocessor using ultra-low threshold voltage CMOSTamotsu Miyake; Takeo Yamashita; Norikatsu Asari; Hideki Sekisaka; Toru Sakai; Kazuhiro Matsuura; Atsushi Wakahara; Hideyuki Takahashi; Toru Hiyama; Kazuhisa Miyamoto; Kazutaka Mori20012001, vol.101, no.247
Architecture of high performance field programmable VLSI processorNaotaka Ohsawa; Masanori Hariyama; Michitaka Kameyama20012001, vol.101, no.247
A pixel-level automatic calibration circuit scheme for sensing initialization of a capacitive fingerprint sensor LSIH. Morimura; S. Shigematsu; T. Shimamura; K. Machida; H. Kyuragi20012001, vol.101, no.247
A threshold logic-based high-speed hamming distance detector and its evaluationHiroaki Yamaoka; Kunihiro Asada20012001, vol.101, no.247
Device consideration of variable threshold voltage CMOS circuitsToshiro Hiramoto20012001, vol.101, no.247
Comparison of measurement methods of interface trap density for n-MOSFETs with Si-implanted gate-SiO{sub}2Toshihiro Matsuda; Ryosuke Takezawa; Kazunori Arakawa; Masahiro Yasuda; Takashi Ohzone20012001, vol.101, no.247
Performance improvement of metal gate CMOS technologiesS. Matsuda; H. Yamakawa; A. Azuma; Y. Toyoshima20012001, vol.101, no.247
A study of analog characteristics of CMOS with heavily nitrided NO oxynitridesTatsuya Ohguro; Takeshi Nagano; Makoto Fujiwara; Mariko Takayanagi; Kei Shimizu; Hisayo Momose; Shinichi Nakamura; Yoshiaki Toyoshima20012001, vol.101, no.247
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