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期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：硅器件和材料
收藏年代2000～2023



全部

2000 2001 2002 2009 2013 2014
2015 2017 2020 2021 2022 2023

2001, vol.101, no.107 2001, vol.101, no.108 2001, vol.101, no.246 2001, vol.101, no.247 2001, vol.101, no.320 2001, vol.101, no.321
2001, vol.101, no.350 2001, vol.101, no.430 2001, vol.101, no.515 2001, vol.101, no.571 2001, vol.101, no.573 2001, vol.101, no.718
2001, vol.101, no.719

题名作者出版年年卷期
Study on non-stationary process in silicon oxide film growth by simulationsKenji Nanjo; Yasumi Kotani; Yasuhisa Omura20012001, vol.101, no.321
Study of parameter extraction using genetic algorithmTetsunori Wada; Takahisa Kanemura20012001, vol.101, no.321
A dummy pattern design system based on a CMP modelToshiyuki Ohta20012001, vol.101, no.321
Oxidation simulation in 3D process simulator HySyProSTetsuya Uchida; Kaina Suzuki; Masahiro Takenaka; Hideaki Ishikawa; Sanae Ito; Eiji Tsukuda; Hirotaka Amakawa; Kenji Nishi20012001, vol.101, no.321
Device simulation technique for flashKazuya Matsuzawa; Takamitsu Ishihara; Hiroaki Hazama20012001, vol.101, no.321
A simplified model for reverse short channel effect on MOSFET - application to actual devicesHirokazu Hayashi; Noriyuki Miura; Hirotaka Komatsubara; Marie Mochizuki; Koichi Fukuda20012001, vol.101, no.321
Wavepacket approach for quantum transport theory of semiconductorsMasato Morifuji; Minekazu Ono20012001, vol.101, no.321
Monte Carlo device simulation considering quantum corrected forcesHideaki Tsuchiya; Brian Winstead; Umberto Ravaioli20012001, vol.101, no.321
Full-band Monte Carlo simulation for two-dimensional electron gas in SOI MOSFETHiroshi Takeda; Nobuya Mori; Chihiro Hamaguchi20012001, vol.101, no.321
Pseudopotential calculations for band structure of strained Si on Si{sub}(1-x)Ge{sub}x substratesHiroshi Nakatsuji; Yoshinari Kamakura; Kenji Taniguchi20012001, vol.101, no.321
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