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期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2004, vol.25, no.1 2004, vol.25, no.10 2004, vol.25, no.11 2004, vol.25, no.12 2004, vol.25, no.2 2004, vol.25, no.3
2004, vol.25, no.4 2004, vol.25, no.5 2004, vol.25, no.6 2004, vol.25, no.7 2004, vol.25, no.8 2004, vol.25, no.9

题名作者出版年年卷期
P-Channel InGaN-HFET Structure Based on Polarization DopingT. Zimmermann; M. Neuburger; M. Kunze; I. Daumiller; A. Denisenko; A. Dadgar; A. Krost; E. Kohn20042004, vol.25, no.7
AlGaN-GaN HEMTs on Si With Power Density Performance of 1.9 W/mm at 10 GHzA. Minko; V. Hoel; E. Morvan; B. Grimbert; A. Soltani; E. Delos; D. Ducatteau; C. Gaquiere; D. Theron; J. V. C. De Jaeger; H. Lahreche; L. Wedzikowski; R. Langer; P. Bove20042004, vol.25, no.7
Micro-Raman Temperature Measurements for Electric Field Assessment in Active AlGaN-GaN HFETsS. Rajasingam; J. W. Pomeroy; M. Kuball; M. J. Uren; T. Martin; D. C. Herbert; K. P. Hilton; R. S. Balmer20042004, vol.25, no.7
12 W/mm AlGaN-GaN HFETs on Silicon SubstratesJ. W. Johnson; E. L. Piner; A. Vescan; R. Therrien; P. Rajagopal; J. C. Roberts; J. D. Brown; S. Singhal; K. J. Linthicum20042004, vol.25, no.7
Room Temperature Operation of an In-Plane Half-Adder Based on Ballistic Y-JunctionsS. Reitzenstein, L. Worschech, A. Forchel20042004, vol.25, no.7
Optimized NH{sub}3 Annealing Process for High-Quality HfSiON Gate OxideMohammad S. Akbar; H. -J. Cho; R. Choi; C. S. Kang; C. Y. Kang; C. H. Choi; S. J. Rhee; Y. H. Kim; Jack C. Lee20042004, vol.25, no.7
RF Characteristics of a High-Performance, 10-fF/μm{sup}2 Capacitor in a Deep TrenchWill Z. Cai; Sudhama Shastri; Gordy Grivna; Yujing Wu; Gary Loechelt20042004, vol.25, no.7
PWM Digital Pixel Sensor Based on Asynchronous Self-Resetting SchemeAlistair Kitchen; Amine Bermak; Abdesselam Bouzerdoum20042004, vol.25, no.7
Fabrication and Characterization of 11-kV Normally Off 4H-SiC Trenched-and-Implanted Vertical Junction FETJian H. Zhao; Petre Alexandrov; Jianhui Zhang; Xueqing Li20042004, vol.25, no.7
Influences of δ-Doping Position on the Characteristics of SiGe-Si DCFETsSan Lein Wu; Pei Wei Chien; Shoou Jinn Chang; Shinji Koh; Yasuhiro Shiraki20042004, vol.25, no.7
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