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期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2004, vol.25, no.1 2004, vol.25, no.10 2004, vol.25, no.11 2004, vol.25, no.12 2004, vol.25, no.2 2004, vol.25, no.3
2004, vol.25, no.4 2004, vol.25, no.5 2004, vol.25, no.6 2004, vol.25, no.7 2004, vol.25, no.8 2004, vol.25, no.9

题名作者出版年年卷期
Monte Carlo Simulation of Schottky Diodes Operating Under Terahertz Cyclostationary ConditionsP. Shiktorov; E. Starikov; V. Gruzinskis; S. Perez; T. Gonzalez; L. Reggiani; L. Varani; J. C. Vaissiere20042004, vol.25, no.1
Bias and Temperature Dependence of Sb-Based Heterostructure Millimeter-Wave Detectors With Improved SensitivityR. G. Meyers; P. Fay; J. N. Schulman; S. Thomas, III; D. H. Chow; J. Zinck; Y. K. Boegeman; P. Deelman20042004, vol.25, no.1
High-Power Polarization-Engineered GaN/AlGaN/GaN HEMTs Without Surface PassivationL. Shen; R. Coffie; D. Buttari; S. Heikman; A. Chakraborty; A. Chini; S. Keller; S. P. DenBaars; U. K. Mishra20042004, vol.25, no.1
Contact Resistance Measurement of Bonded Copper Interconnects for Three-Dimensional Integration TechnologyK. N. Chen; A. Fan; C. S. Tan; R. Reif20042004, vol.25, no.1
TDDB and Polarity-Dependent Reliability of High-Quality, Ultrathin CVD HfO{sub}2 Gate Stack With TaN Gate ElectrodeSungjoo Lee; D. L. Kwong20042004, vol.25, no.1
A New Junction Termination Method Employing Shallow Trenches Filled With OxideJae-Keun Oh; Min-Woo Ha; Min-Koo Han; Yearn-Ik Choi20042004, vol.25, no.1
A Nondestructive Approach to Predict the Failure Time of Thin-Film Interconnects Under High-Stress CurrentM. Islam; E. Misra; H. C. Kim; Mahbub Hasan; T. L. Alford20042004, vol.25, no.1
Light Guide for Pixel Crosstalk Improvement in Deep Submicron CMOS Image SensorT. H. Hsu; Y. K. Fang; C. Y. Lin; S. F. Chen; C. S. Lin; D. N. Yaung; S. G. Wuu; H. C. Chien; C. H. Tseng; J. S. Lin; C. S. Wang20042004, vol.25, no.1
Poly-Si TFTs With Asymmetric Dual-Gate for Kink Current ReductionMin-Cheol Lee; Min-Koo Han20042004, vol.25, no.1
A Novel Low-Voltage N-Channel Heterostructure Dynamic Threshold Voltage MOSFET (N-HDTMOS) With p-Type Doped SiGe BodyTakahiro Kawashima; Yoshihiro Kara; Yoshihiko Kanzawa; Haruyuki Sorada; Akira Inoue; Akira Asai; Takeshi Takagi20042004, vol.25, no.1
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