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期刊


ISSN0957-4522
刊名Journal of Materials Science
参考译名材料科学杂志：电子材料
收藏年代1999～2013



全部

1999 2000 2001 2002 2003 2004
2005 2006 2007 2008 2009 2010
2011 2012 2013

2005, vol.16, no.1 2005, vol.16, no.10 2005, vol.16, no.11-12 2005, vol.16, no.2 2005, vol.16, no.3 2005, vol.16, no.4
2005, vol.16, no.5 2005, vol.16, no.6 2005, vol.16, no.7 2005, vol.16, no.8 2005, vol.16, no.9

题名作者出版年年卷期
Study of magnetic properties of thin cobalt films deposited by chemical vapour depositionN. DEO; M. F. BAIN; J. H. MONTGOMERY; H. S. GAMBLE20052005, vol.16, no.7
Structural and electrical characterization of AgInS{sub}2 thin films grown by single-source thermal evaporation methodY. AKAKI; S. KURIHARA; M. SHIRAHAMA; K. TSURUGIDA; T. KAKENO; K. YOSHINO20052005, vol.16, no.7
Synthesis and photoluminescence of ZnO nanowires/nanorodsJ. GRABOWSKA; K. K. NANDA; E. MCGLYNN; J.-P. MOSNIER; M. O. HENRY; A. BEAUCAMP; A. MEANEY20052005, vol.16, no.7
Structural, optical and electrical characterization on ZnO film grown by a spray pyrolysis methodK. YOSHINO; T. FUKUSHIMA; M. YONETA20052005, vol.16, no.7
GaN reactive ion etching using SiCl{sub}4:Ar:SF{sub}6 chemistryE. SILLERO; F. CALLE; M. A. SANCHEZ-GARCIA20052005, vol.16, no.7
Growth and characterisation of wide-bandgap, I-VII optoelectronic materials on siliconL. O'REILLY; G. NATARAJAN; P. J. MCNALLY; D. CAMERON; O. F. LUCAS; M. MARTINEZ-ROSAS; L. BRADLEY; A. READER; S. DANIELS20052005, vol.16, no.7
Fabrication of p-type doped ZnO thin films using pulsed laser depositionJ.-R. DUCLERE; R. O'HAIRE; A. MEANEY; K. JOHNSTON; I. REID; G. TOBIN; J.-P. MOSNIER; M. GUILLOUX-VIRY; E. MCGLYNN; M. O. HENRY20052005, vol.16, no.7
Atomistic structure and strain relaxation in Czochralski-grown Si{sub}xGe{sub}(1-x) bulk alloysI. YONENAGA; M. SAKURAI; M. H. F. SLUITER; Y. KAWAZOE; S. MUTO20052005, vol.16, no.7
Tungsten work function engineering for dual metal gate nano-CMOSJ. K. EFAVI; T. MOLLENHAUER; T. WAHLBRINK; H. D. B. GOTTLOB; M. C. LEMME; H. KURZ20052005, vol.16, no.7
Investigation of copper layers deposited by CVD using Cu(I)hfac(TMVS) precursorB. H. W. TOH; D. W. MCNEILL; H. S. GAMBLE20052005, vol.16, no.7
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