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期刊


ISSN0957-4522
刊名Journal of Materials Science
参考译名材料科学杂志：电子材料
收藏年代1999～2013



全部

1999 2000 2001 2002 2003 2004
2005 2006 2007 2008 2009 2010
2011 2012 2013

2005, vol.16, no.1 2005, vol.16, no.10 2005, vol.16, no.11-12 2005, vol.16, no.2 2005, vol.16, no.3 2005, vol.16, no.4
2005, vol.16, no.5 2005, vol.16, no.6 2005, vol.16, no.7 2005, vol.16, no.8 2005, vol.16, no.9

题名作者出版年年卷期
The electrical behavior of laminated conductive polymer composite at low temperaturesS. F. YASIN; A. M. ZIHLIF; G. RAGOSTA20052005, vol.16, no.2
Effect of N{sub}2 gas annealing and SiO{sub}2 barrier on the optical transmittance and electrical resistivity of a transparent Sb-doped SnO{sub}2 conducting filmTAE-YOUNG LIM; CHANG-YEOUL KIM; BUM-SUK KIM; BONG GEUN CHOI; KWANGBO SHIM20052005, vol.16, no.2
Comparison of theoretical predictions and experimental values of the dielectric constant of epoxy/BaTiO{sub}3 composite embedded capacitor filmsSung-Dong Cho; Sang-Yong Lee; Jin-Gul Hyun20052005, vol.16, no.2
Dilution effects on X-ray photoelectron spectra of La{sub}(0.8)Sr{sub}(0.2)MnO{sub}3 with SiO{sub}2SHIGEMI KOHIKI; YOSHIHISA ISHIDA; TAKESHI KUMASHIRO; HIROKAZU SHIMOOKA; TAKAYUKI TAJIRI; HIROYUKI DEGUCHI; MASAOKI OKU20052005, vol.16, no.2
UV-cured hybrid inorganic-organic polymer electrolyte based on organically modified polysiloxaneWEI-LI QIU; XIAO-HUA MA; QING-HE YANG; YAN-BAO FU; XIANG-FU ZONG20052005, vol.16, no.2
The structural properties of Ge{sub}xSb{sub}(40-x)Se{sub}60 systemA. M. FARID; S. S. FOUAD; A. H. AMMAR20052005, vol.16, no.2
Annealing effects on the structural and optical properties of gallium oxide nanowiresHYOUN WOO KIM; NAM HO KIM; CHONGMU LEE20052005, vol.16, no.2
Properties of LT-AlGaN films and HT-GaN films using LT-AlGaN buffer layers grown on (0001) sapphire substratesCHENG-LIANG WANG; JYH-RONG GONG20052005, vol.16, no.2
Electrodeposition of nickel selenide thin films in the presence of triethanolamine as a complexing agentZ. ZAINAL; N. SARAVANAN; H. L. MIEN20052005, vol.16, no.2
Patterned porous silicon formed with photolithographyM. OHMUKAI; K. OKADA; Y. TSUTSUMI20052005, vol.16, no.2



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