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期刊


ISSN0957-4522
刊名Journal of Materials Science
参考译名材料科学杂志：电子材料
收藏年代1999～2013



全部

1999 2000 2001 2002 2003 2004
2005 2006 2007 2008 2009 2010
2011 2012 2013

2006, vol.17, no.1 2006, vol.17, no.10 2006, vol.17, no.11 2006, vol.17, no.12 2006, vol.17, no.2 2006, vol.17, no.3
2006, vol.17, no.4 2006, vol.17, no.5 2006, vol.17, no.6 2006, vol.17, no.7 2006, vol.17, no.8 2006, vol.17, no.9

题名作者出版年年卷期
Development of high sensitivity oxide based strain gauges and pressure sensorsK. Arshak; D. Morris; A. Arshak; O. Korostynska20062006, vol.17, no.9
A model of non-Ohmic conduction in ZnO varistorsA. B. Glot20062006, vol.17, no.9
Redox properties of a green emitting ZnGa{sub}2O{sub}4:Mn low voltage cathodoluminescent phosphorR. Withnall; A. L. Lipman; G. R. Fern; A. Rose; J. Silver20062006, vol.17, no.9
The evolution of oxide cathodes for cathode ray tube applicationsD. S. Barratt; S. N. Jenkins20062006, vol.17, no.9
Chemical and sol-gel processing of tellurite glasses for optoelectronicsS. N. B. Hodgson; L. Weng20062006, vol.17, no.9
Surface roughness and interface engineering for gate dielectrics on strained layersC. K. Maiti; S. K. Samanta; M. K. Bera; S. Chattopadhyay20062006, vol.17, no.9
High-k gate oxide for silicon heterostructure MOSFET devicesY. K. Ray; R. Mahapatra; S. Maikap20062006, vol.17, no.9
Growth and characterization of HfO{sub}2 high-k gate dielectric films by laser molecular beam epitaxy (LMBE)Y. K. Lu; X. F. Chen; W. Zhu; R. Gopalkrishnan20062006, vol.17, no.9
Electrical studies of semiconductor-dielectric interfacesM. Jamal Deen; Benjamin Iniguez; Ognian Marinov; Francois Lime20062006, vol.17, no.9
Orientation dependence of dielectric and relaxor behaviour in Aurivillius phase BaBi{sub}2Nb{sub}2O{sub}9 ceramics prepared by spark plasma sinteringHaixue Yan; Hongtao Zhang; Rick Ubic; Mike Reece; Jing Liu; Zhijian Shen20062006, vol.17, no.9
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