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期刊


ISSN0957-4522
刊名Journal of Materials Science
参考译名材料科学杂志：电子材料
收藏年代1999～2013



全部

1999 2000 2001 2002 2003 2004
2005 2006 2007 2008 2009 2010
2011 2012 2013

2005, vol.16, no.1 2005, vol.16, no.10 2005, vol.16, no.11-12 2005, vol.16, no.2 2005, vol.16, no.3 2005, vol.16, no.4
2005, vol.16, no.5 2005, vol.16, no.6 2005, vol.16, no.7 2005, vol.16, no.8 2005, vol.16, no.9

题名作者出版年年卷期
Improvement of porous polysilicon nano-structured emitter for vacuum packaged devicesJOO-WON LEE; KYEONG-KAP PAEK; JIN JANG; BYEONG-KWON JU20052005, vol.16, no.3
Spin-valve effect in an FM/Si/FM junctionK. I. LEE; H. J. LEE; J. Y. CHANG; S. H. HAN; Y. K. KIM; W. Y. LEE20052005, vol.16, no.3
Superconductors of the BPSCCO system obtained from rapid cooling processC. L. CARVALHO; K. YUKIMITU; V. C. S. REYNOSO; J. C. S. MORAES; E. B. ARAUJO; N. ALVES; S. RAINHO20052005, vol.16, no.3
The use of yttrium (III) isopropoxide to improve thermal conductivity of polycrystalline aluminum nitride (AlN) ceramicsADOLFO FRANCO JUNIOR; DANIEL J. SHANAFIELD20052005, vol.16, no.3
DC conduction behaviour of niobium doped barium stannatePRABHAKAR SINGH; OM PARKASH; DEVENDRA KUMAR20052005, vol.16, no.3
Microwave dielectric properties of Ba{sub}(5+n)Ti{sub}nNb{sub}4O{sub}(15+3n) ceramicsLIANG FANG; L. CHEN; HUI ZHANG; X. K. HONG; C. L. DIAO; H. X. LIU20052005, vol.16, no.3
Interfacial reactions of Sn-3.5% Ag and Sn-3.5% Ag-0.5% Cu solder with electroless Ni/Au metallization during multiple reflow cyclesAHMED SHARIF; Y. C. CHAN20052005, vol.16, no.3
Solution route synthesis and characterization of nanocrystalline Bi{sub}2Ru{sub}2O{sub}7 for usage in resistor paste applicationK. GURUNATHAN; N. P. VYAWAHARE; G. J. PHATAK; D. P. AMALNERKAR20052005, vol.16, no.3
Role of imposed cyclic straining on the stress relaxation behavior of eutectic Sn-3.5Ag solder jointsH. RHEE; K. N. SUBRAMANIAN; A. LEE20052005, vol.16, no.3
An analysis of the distributions of electronic states associated with hydrogenated amorphous siliconSAAD M. MALIK; STEPHEN K. O'LEARY20052005, vol.16, no.3



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