长垣产业园区科技文献服务平台

期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2005, vol.26, no.1 2005, vol.26, no.10 2005, vol.26, no.11 2005, vol.26, no.12 2005, vol.26, no.2 2005, vol.26, no.3
2005, vol.26, no.4 2005, vol.26, no.5 2005, vol.26, no.6 2005, vol.26, no.7 2005, vol.26, no.8 2005, vol.26, no.9
2005, vol.26, no.9 2

题名作者出版年年卷期
Improved Reliability of AlGaN-GaN HEMTs Using an NH{sub}3 Plasma Treatment Prior to SiN PassivationAndrew P. Edwards; Jeffrey A. Mittereder; Steven C. Binari; D. Scott Katzer; David F. Storm; Jason A. Roussos20052005, vol.26, no.4
Dual-Work-Function Metal Gates by Full Silicidation of Poly-Si With Co-Ni Bi-LayersJ. Liu; H. C. Wen; J. P. Lu; D.-L. Kwong20052005, vol.26, no.4
Three-Layer Laminated Metal Gate Electrodes With Tunable Work Functions for CMOS ApplicationsW. P. Bai; S. H. Bae; H. C. Wen; S. Mathew; L. K. Bera; N. Balasubramanian; N. Yamada; M. R. Li; D.-L. Kwong20052005, vol.26, no.4
Elimination of Poly-Si Gate Depletion for Sub-65-nm CMOS Technologies by Excimer Laser AnnealingHiu Yung Wong; Hideki Takeuchi; Tsu-Jae King; Michael Ameen; Aditya Agarwal20052005, vol.26, no.4
Improved Electrical and Reliability Characteristics of HfN-HfO{sub}2-Gated nMOSFET With 0.95-nm EOT Fabricated Using a Gate-First ProcessJ. F. Kang; H. Y. Yu; C. Ren; X. P. Wang; M. -F. Li; D. S. H. Chan; Y. -C. Yeo; N. Sa; H. Yang; X. Y. Liu; R. Q. Han; D.-L. Kwong20052005, vol.26, no.4
A CMOS-Compatible DNA Microarray Using Optical Detection Together With a Highly Sensitive Nanometallic Particle ProtocolChen Xu; Jiong Li; Yijin Wang; Lu Cheng; Zuhong Lu; Mansun Chan20052005, vol.26, no.4
High-Mobility Strained SiGe-on-Insulator pMOSFETs With Ge-Rich Surface Channels Fabricated by Local Condensation TechniqueTsutomu Tezuka; Shu Nakaharai; Yoshihiko Moriyama; Naoharu Sugiyama; Shin-ichi Takagi20052005, vol.26, no.4
Base Resistance Scaling for SiGeC HBTs With a Fully Nickel-Silicided Extrinsic BaseB. Gunnar Malm; Erik Haralson; Erdal Suvar; Henry H. Radamson; Yong-Bin Wang; Mikael Ostling20052005, vol.26, no.4
A Novel Self-Aligned Poly-Si TFT With Field-Induced Drain Formed by the Damascene ProcessJoon-ha Park; Ohyun Kim20052005, vol.26, no.4
Leakage Suppression of Gated Diodes Fabricated Under Low-Temperature Annealing With Substitutional Carbon Si{sub}(1-y)C{sub}y IncorporationChung Foong Tan; Eng Fong Chor; Hyeokjae Lee; Jinping Liu; Elgin Quek; Lap Chan20052005, vol.26, no.4
12



国家科技图书文献中心  全球文献资源网  京ICP备05055788号-26  机械工业信息研究院 2018-2024