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期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2005, vol.26, no.1 2005, vol.26, no.10 2005, vol.26, no.11 2005, vol.26, no.12 2005, vol.26, no.2 2005, vol.26, no.3
2005, vol.26, no.4 2005, vol.26, no.5 2005, vol.26, no.6 2005, vol.26, no.7 2005, vol.26, no.8 2005, vol.26, no.9
2005, vol.26, no.9 2

题名作者出版年年卷期
High Breakdown Voltage (Al{sub}0.3Ga{sub}0.7){sub}0.5PIn{sub}0.5P/InGaAs Quasi-Enhancement-Mode pHEMT With Field-Plate TechnologyH.-C. Chiu; Y.-C. Chiang; C.-S. Wu20052005, vol.26, no.10
Mechanism of Current Collapse Removal in Field-Plated Nitride HFETsA. Koudymov; V. Adivarahan; J. Yang; G. Simin; M. Asif Khan20052005, vol.26, no.10
High Switching Performance 0.1-μm Metamorphic HEMTs for Low Conversion Loss 94-GHzDan An; Bok-Hyung Lee; Byeong-Ok Lim; Mun-Kyo Lee; Sung-Chan Kim; Jung-Hun Oh; Sam-Dong Kim; Hyung-Moo Park; Dong-Hoon Shin; Jin-Koo Rhee20052005, vol.26, no.10
Transient Pulsed Analysis on GaN HEMTs at Cryogenic TemperaturesChing-Hui Lin; Wen-Kai Wang; Po-Chen Lin; Cheng-Kuo Lin; Yu-Jung Chang; Yi-Jen Chan20052005, vol.26, no.10
High Mobility NMOSFET Structure With High-κ DielectricMatthias Passlack; Ravi Droopad; Karthik Rajagopalan; Jonathan Abrokwah; Rich Gregory; Danh Nguyen20052005, vol.26, no.10
Direct Extraction of Mobility in Pentacene OFETs Using C-V and I-V MeasurementsK. Ryu; I. Kymissis; V. Bulovic; C. G. Sodini20052005, vol.26, no.10
Resistance Switching of the Nonstoichiometric Zirconium Oxide for Nonvolatile Memory ApplicationsDongsoo Lee; Hyejung Choi; Hyunjun Sim; Dooho Choi; Hyunsang Hwang; Myoung-Jae Lee; Sun-Ae Seo; I. K. Yoo20052005, vol.26, no.10
Improvement of Interfacial Layer Reliability by Incorporation of Deuterium Into HfAlO{sub}x Formed by D{sub}2O-ALDKazuyoshi Torii; Takaaki Kawahara; Kenji Shiraishi20052005, vol.26, no.10
Improved Interface Quality and Charge-Trapping Characteristics of MOSFETs With High-κ Gate DielectricHokyung Park; M. Shahriar Rahman; Man Chang; Byoung Hun Lee; Rino Choi; Chadwin D. Young; Hyunsang Hwang20052005, vol.26, no.10
Very High-Density (23 fF/μm{sup}2) RF MIM Capacitors Using high-κ TaTiO as the DielectricK. C. Chiang; C. H. Lai; Albert Chin; T. J. Wang; H. F. Chiu; Jiann-Ruey Chen; S. P. McAlister; C. C. Chi20052005, vol.26, no.10
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