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期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2003, vol.24, no.1 2003, vol.24, no.10 2003, vol.24, no.11 2003, vol.24, no.12 2003, vol.24, no.2 2003, vol.24, no.3
2003, vol.24, no.4 2003, vol.24, no.5 2003, vol.24, no.6 2003, vol.24, no.7 2003, vol.24, no.8 2003, vol.24, no.9

题名作者出版年年卷期
Potential Vulnerability of Dynamic CMOS Logic to Soft Gate Oxide BreakdownB. Kaczer; G. Groeseneken20032003, vol.24, no.12
Fully Silicided NiSi and Germanided NiGe Dual Gates on SiO{sub}2 n- and p-MOSFETsD. S. Yu; C. H. Wu; C. H. Huang; Albert Chin; W. J. Chen; Chunxiang Zhu; M. F. Li; Dim-Lee Kwong20032003, vol.24, no.12
Data Retention Characteristics of Sub-100 nm NAND Flash Memory CellsJae-Duk Lee; Jeong-Hyuk Choi; Donggun Park; Kinam Kim20032003, vol.24, no.12
Explaining the Parameters of the Electron Valence-Band Tunneling Related Lorentzian Noise in Fully Depleted SOI MOSFETsE. Simoen; A. Mercha; J. M. Rafi; C. Claeys; N. B. Lukyanchikova; N. Garbar20032003, vol.24, no.12
Effects of Gate Notching Profile Defect on Performance Characteristics of Short-Channel NMOSFET With Channel Length of 0.12μmSang-Hun Seo; Won-Suk Yang; Sung-Jin Kim; Jun-Yong Ju; Joo- Young Kim; Hyun-Chul Peak; Seung-Hyun Park; Seug-Gyu Kim; Kyeong-Tae Kim20032003, vol.24, no.12
Substrate Current Based Avalanche Multiplication Measurement in 120 GHz SiGe HBTsJun Pan; Guofu Niu; Jin Tang; Yun Shi; Alvin J. Joseph; David L. Harame20032003, vol.24, no.12
Suppression of Corner Effects in Triple-Gate MOSFETsJ. G. Possum; J.-W. Yang; V. P. Trivedi20032003, vol.24, no.12
High-Performance MIM Capacitor Using ALD High-κ HfO{sub}2-Al{sub}2O{sub}3 Laminate DielectricsShi-Jin Ding; Hang Hu; H. F. Lim; S. J. Kim; X. F. Yu; Chunxiang Zhu; M. F. Li; Byung Jin Cho; Daniel S. H. Chan; Subhash C. Rustagi; M. B. Yu; Albert Chin; Dim-Lee Kwong20032003, vol.24, no.12
Surface Treatment Effect on the Poly-Si TFTs Fabricated by Electric Field Enhanced Crystallization of Ni/a-Si:H FilmsBinn Kim; Hae-Yeol Kim; Hyun-Sik Seo; Sung Ki Kim; Chang-Dong Kim20032003, vol.24, no.12
60-GHz High Power Performance In{sub}0.35Al{sub}0.65As-In{sub}0.35Ga{sub}0.65As Metamorphic HEMTs on GaAsM. Zaknoune; M. Ardouin; Y. Cordier; S. Bollaert; B. Bonte; D. Theron20032003, vol.24, no.12



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