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期刊

ISSN	0741-3106
刊名	IEEE Electron Device Letters
参考译名	IEEE电子器件快报
收藏年代	1998～2007

全部

1998	1999	2000	2001	2002	2003
2004	2005	2006	2007

2003, vol.24, no.1	2003, vol.24, no.10	2003, vol.24, no.11	2003, vol.24, no.12	2003, vol.24, no.2	2003, vol.24, no.3
2003, vol.24, no.4	2003, vol.24, no.5	2003, vol.24, no.6	2003, vol.24, no.7	2003, vol.24, no.8	2003, vol.24, no.9

题名

作者

出版年

年卷期

A Novel Half-Adder Circuit Based on Nanometric Ballistic Y-Branched Junctions

S. Reitzenstein; L. Worschech; A. Forchel

2003

2003, vol.24, no.10

Dual Work Function Metal Gates Using Full Nickel Silicidation of Doped Poly-Si

J. H. Sim; H. C. Wen; J. P. Lu; D. L. Kwong

2003

2003, vol.24, no.10

A Novel Technology to Form Self-Aligned Emitter Ledge for Heterojunction Bipolar Transistors

Hong Wang; Geok-Ing Ng

2003

2003, vol.24, no.10

Flicker Noise of GaN-Based Heterostructure Field-Effect Transistors With Si-Doped AlGaN Carrier Injection Layer

Yan-Kuin Su; Sun-Chin Wei; Ruey-Lue Wang; Shoou-Jinn Chang; Chih-Hsin Ko; Ta-Ming Kuan

2003

2003, vol.24, no.10

Fabrication of InGaP/Al{sub}0.98Ga{sub}0.02As/GaAs Oxide-Confined Collector-Up Heterojunction Bipolar Transistors

W. B. Chen; Y. K. Su; C. L. Lin; H. C. Wang; S. M. Chen; J. Y. Su; M. C. Wu

2003

2003, vol.24, no.10

High-Performance, Metamorphic In{sub}xGa{sub}x - xAs Tunnel Diodes Grown by Molecular Beam Epitaxy

O. Kwon; M. M. Jazwiecki; R. N. Sacks; S. A. Ringel

2003

2003, vol.24, no.10

Investigation of NiSi and TiSi as CMOS Gate Materials

Peiqi Xuan; Jeffrey Bokor

2003

2003, vol.24, no.10

AlGaN-GaN HEMTs on SiC With CW Power Performance of >4 W/mm and 23% PAE at 35 GHz

Cathy Lee; Paul Saunier; Jinwei Yang; M. Asif Khan

2003

2003, vol.24, no.10

Self-Heating Induced Soft Degradation of the Early Voltage in SiGe:C HBTs

M. W. Xu; A. Sibaja-Hernandez; A. Sadovnikov; S. Decoutere

2003

2003, vol.24, no.10

Bistable Gated Bipolar Device

Russell Duane; Alan Mathewson; Ann Concannon

2003

2003, vol.24, no.10