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期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2000, vol.21, no.1 2000, vol.21, no.10 2000, vol.21, no.11 2000, vol.21, no.12 2000, vol.21, no.2 2000, vol.21, no.3
2000, vol.21, no.4 2000, vol.21, no.5 2000, vol.21, no.6 2000, vol.21, no.7 2000, vol.21, no.8 2000, vol.21, no.9

题名作者出版年年卷期
A 20-nm physical gate length NMOSFET featuring 1.2 nm gate oxide, shallow implanted source and drain and BF{sub}2 pocketsS. Deleonibus; C. Caillat; G. Guegan; M. Heitzmann; M. E. Nier; S. Tedesco; B. Dal'zotto; F. Martin; P. Mur; A. M. Papon; G. Lecarval; S. Biswas; D. Souil20002000, vol.21, no.4
A novel method for a smooth interface at poly-SiO{sub}x/SiO{sub}2 by employing selective etchingJae-Hong Jeon; Juhn-Suk Yoo; Cheol-Min Park; Hong-Seok Choi; Min-Koo Han20002000, vol.21, no.4
Are soft breakdown and hard breakdown of ultrathin gate oxides actually different failure mechanisms?Jordi Sune; Giovanna Mura; Enrique Miranda20002000, vol.21, no.4
Bake induced charge gain in NOR flash cellsR. Fastow; K. Ahmed; S. Haddad; M. Randolph; C. Huster; P. Hom20002000, vol.21, no.4
Cz bifacial solar cellsC. del Canizo; A. Moehlecke; I. Zanesco; A. Luque20002000, vol.21, no.4
Effect of polysilicon gate type on the flatband voltage shift for ultrathin oxide-nitride gate stacksZhigang Wang; Chris G. Parker; Dexter W. Hodge; Robert T. Croswell; Nian Yang; Veena Misra; John R. Hauser20002000, vol.21, no.4
Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectricLaegu Kang; Byoung Hun Lee; Wen-Jie Qi; Yongjoo Jeon; Renee Nieh; Sundar Gopalan; Katsunori Onishi; Jack C. Lee20002000, vol.21, no.4
Fabrication and testing of surface micromachined polycrystalline SiC micromotorsA. Azzam Yasseen; Chien Hung Wu; Christian A. Zorman; Mehran Mehregany20002000, vol.21, no.4
Gate length scaling in high performance InGaP/InGaAs/GaAs PHEMT'sP. Fay; K. Stevens; J. Elliot; N. Pan20002000, vol.21, no.4
Graded gate VDMOSFETShuming Xu; Kian Paau Gan; Pang Dow Foo; Yi Su; Yong Liu20002000, vol.21, no.4
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