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期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2000, vol.21, no.1 2000, vol.21, no.10 2000, vol.21, no.11 2000, vol.21, no.12 2000, vol.21, no.2 2000, vol.21, no.3
2000, vol.21, no.4 2000, vol.21, no.5 2000, vol.21, no.6 2000, vol.21, no.7 2000, vol.21, no.8 2000, vol.21, no.9

题名作者出版年年卷期
A LDMOS technology compatible with CMOS and passive components for integrated RF power amplifiersYue Tan; Mahender Kumar; Johnny K. O. Sin; Jun Cai; Jack Lau20002000, vol.21, no.2
AlGaN/GaN metal oxide semiconductor heterostructure field effect transistorM. Asif Khan; X. Hu; G. Sumin; A. Lunev; J. Yang; R. Gaska; M. S. Shur20002000, vol.21, no.2
Highly uniform and low turn-on voltage Si field emitter arrays fabricated using chemical mechanical polishingMeng Ding; Han Kim; Akintunde I. Akinwande20002000, vol.21, no.2
Metamorphic In{sub}5.3Ga{sub}.47As/In{sub}5.2Al{sub}.48As HEMT's on germanium substratesK. van der Zanden; D. Schreurs; P. Mijlemans; G. Borghs20002000, vol.21, no.2
Microwave power performance comparison between single and dual doped-channel design in AlGaAs/InGaAs HFET'sFeng-Tso Chien; Shien-Chin Chiol; Yi-Jen Chan20002000, vol.21, no.2
Plasma hydrogenation of metal-induced laterally crystallized thin film transistorsGururaj Bhat; Hoi Kwok; Man Wong20002000, vol.21, no.2
Poly - Si thin-film transistors on steel substratesRobert S. Howell; Mark Stewart; Sooraj V. Karnik; Sambit K. Saha; Miltiadis K. Hatalis20002000, vol.21, no.2
Sub-100 nm Γ-gate MOSFET's with self-aligned drain extension formed by solid phase diffusionKun H. To; Jason C. S. Woo20002000, vol.21, no.2
The dependence of channel length on channel width in narrow-channel CMOS devices for 0.35-0.13 μM technologiesTerence B. Hook; Serge Biesemans; James Slinkman20002000, vol.21, no.2
The effects of interfacial sub-oxide transition regions and monolayer level nitridation on tunneling currents in silicon devicesHanyang Yang; Hiro Niimi; Jeff W. Keister; Gerald Lucovsky; Jack E. Rowe20002000, vol.21, no.2



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