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期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告:硅器件和材料
收藏年代2000~2023



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2000 2001 2002 2009 2013 2014
2015 2017 2020 2021 2022 2023

2002, vol.102, no.133 2002, vol.102, no.134 2002, vol.102, no.271 2002, vol.102, no.272 2002, vol.102, no.346 2002, vol.102, no.416

题名作者出版年年卷期
Effect of in-situ nitrogen incorporation for electrical characteristics of thin Al{sub}2O{sub}3 gate oxideYoshiaki Tanida; Yasuyuki Tamura; Masaomi Yamaguchi; Shinji Miyagaki; Chikako Yoshida; Yoshihiro Sugiyama; Hitoshi Tanaka20022002, vol.102, no.134
Analysis of chemical bonding features and determination of energy band profile for CVD aluminum oxynitride/Si(100) heterostructuresAtsushi Suyama; Hirokazu Yokoi; Masahiro Narasaki; Wataru Mizubayashi; Hideki Murakami; Seiichi Miyazaki20022002, vol.102, no.134
Electrical characterization of AlO{sub}x:N gate dielectric formed by layer-by-layer CVDH. Murakami; H. Yokoi; W. Mizubayashi; H. Yamashita; X. Gao; S. Miyazaki20022002, vol.102, no.134
Thermal chemical vapor deposition of zirconium/hafnium-silicate thin-film using TEOS and tert-butoxideSeiji Inumiya; Dawei Gao; Kazuhiro Eguchi20022002, vol.102, no.134
Analysis of ZrO{sub}2/Si interface by high-resolution RBSKaoru Sasakawa20022002, vol.102, no.134
Deposition technique of HfO{sub}2 film by MOCVD using Hf[N(C{sub}2H{sub}5){sub}2]{sub}4K. Kubo; T. Takahashi; H. Shinriki20022002, vol.102, no.134
The growth of ZrO{sub}2 and the gate insulation film characteristic by limited-reaction sputtering the format of technical reportKentaro Kawai; Tatsuhiro Hasu; Kousin Monju; Ryou Izumi; Kimihiro Sasaki; Tomonobu Hata20022002, vol.102, no.134
Molybdenum work function control by N{sup}+ implantation for dual gate CMOS application and its influencesTakaaki Amada; Masaki Hino; Nobuhide Maeda; Kentaro Shibahara20022002, vol.102, no.134
The influence of electrode on the characteristics of (Ba,Sr)TiO{sub}3Hiroshi Yamada; Takamaro Kikkawa20022002, vol.102, no.134
Influence of Si substrate crystal orientation on the properties of (Ba,Sr)TiO{sub}3M. Yamato; H. Yamada; K. Quazi; T. Kikkawa20022002, vol.102, no.134