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期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002~2023



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2007, vol.36, no.1 2007, vol.36, no.2 2007, vol.36, no.3 2007, vol.36, no.4 2007, vol.36, no.5 2007, vol.36, no.6

题名作者出版年年卷期
Model of the Diode-Connected GaAs Schottky-Gate Field-Effect TransistorV. I. Starosel'skii; S. B. Burzin; S. S. Shmelev; N. V. Guminov20072007, vol.36, no.4
Modeling of Deep Grooving of Silicon in the Process of Plasmochemical Cyclic Etching/PassivationA. S. Shumllov; I. I. Amirov20072007, vol.36, no.4
Photoluminescence Characterization Technique for Resonant-Tunneling Structures Based on a Long-Period GaAs/AlGaAs Superlattice, Applicable at Different Stages of FabricationA. A. Belov; I. P. Kazakov; A. L. Karuzskii; Yu. A. Mityagin; V. N. Murzin; A. V. Perestoronin; S. S. Shmelev; V. I. Tsekhosh20072007, vol.36, no.4
ARIMA Models Used to Predict the Time to Degradation Failure of TTL ICsM. I. Gorlov; A. V. Strogonov20072007, vol.36, no.4
The Macromodel of an Operational Amplifier with Current OutputYu. B. Rogatkin20072007, vol.36, no.4
Detecting Multiple Errors in RAM by Self-Adjusting Output Data CompressionA. A. Ivaniuk; S. B. Musin; V. N. Yarmolik20072007, vol.36, no.4
LPCVD Borophosphosilicate-Glass Films: Deposition and PropertiesA. S. Turtsevich; O. Yu. Nalivaiko; L. P. Anufriev20072007, vol.36, no.4