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期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



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2021, vol.50, no.1 2021, vol.50, no.2 2021, vol.50, no.3 2021, vol.50, no.4 2021, vol.50, no.5 2021, vol.50, no.6
2021, vol.50, no.8

题名作者出版年年卷期
Investigation of the Effect of the Short-Term Exposure of Oxygen and Hydrogen Plasma on the Composition and Structure of Thin Tin Dioxide FilmsTompakova N. M.; Polisan A. A.20212021, vol.50, no.8
Machine-Learning Based Interatomic Potential for Studying the Properties of Crystal StructuresUvarova O. V.; Uvarov S. I.20212021, vol.50, no.8
Dielectric and Piezoelectric Properties of PLZT x/40/60 (x = 5; 12) CeramicsShcheglova A. I.; Kislova I. L.; Ilina T. S.; Kiselev D. A.; Barabanova E. V.; Ivanova A. I.20212021, vol.50, no.8
Modification of a Germanium Surface Exposed to Radiation of a Nanosecond Ultraviolet LaserZheleznov V. Yu.; Malinsky T. V.; Mikolutsky S. I.; Rogalin V. E.; Filin S. A.; Khomich Yu. V.; Yamshchikov V. A.; Kaplunov I. A.; Ivanova A. I.20212021, vol.50, no.8
Surface-Modified Boron-Carbon BC5 Nanotube with Amine Group as a Sensor Device Element: Theoretical ResearchZaporotskova I. V.; Dryuchkov E. S.; Boroznina N. P.; Kozhitov L. V.; Popkova A. V.20212021, vol.50, no.8
Mathematical Modeling of a Self-Learning Neuromorphic Network Based on Nanosized Memristive Elements with a 1T1R-Crossbar-ArchitectureMorozov A. Yu.; Abgaryan K. K.; Reviznikov D. L.20212021, vol.50, no.8
Simulation of Hall Field Elements Based on Nanosized Silicon-on-Insulator HeterostructuresMordkovich V. N.; Abgaryan K. K.; Reviznikov D. L.; Leonov A. V.20212021, vol.50, no.8
System Interface of Scientific Services of a Digital Platform for Multiscale ModelingKondrashev V. A.; Denisov S. A.20212021, vol.50, no.8
Synthesis and Electromagnetic Properties of FeCoNi/C Nanocomposites Based on Polyvinyl AlcoholMuratov D. G.; Kozhitov L. V.; Kazaryan T. M.; Vasil’ev A. A.; Popkova A. V.; Korovin E. Yu.20212021, vol.50, no.8
Photoluminescence of CaGa2O4 Activated with Rare Earth Ions Yb3+ and Er3+Mar’in A. P.; Mar’ina U. A.; Vorob’ev V. A.; Pigulev R. V.20212021, vol.50, no.8
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