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期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



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2015, vol.44, no.1 2015, vol.44, no.2 2015, vol.44, no.3 2015, vol.44, no.4 2015, vol.44, no.5 2015, vol.44, no.6
2015, vol.44, no.7 2015, vol.44, no.8

题名作者出版年年卷期
Method of Determining Nondestructive Pulsed Laser Annealing Modes for Dielectric and Semiconductor WafersA. F. Kovalenko; A. A. Vorobiev20152015, vol.44, no.8
Structures and Electronic Properties of Defects on the Borders of Silicon Bonded WafersA. N. Tereshchenko; E. A. Steinman; A. A. Mazilkin; M. A. Khorosheva; O. Kononchuk20152015, vol.44, no.8
Diagnostics of the Technological Characteristics of High-Power Transistors Using Relaxation Impedance Spectrometry of Thermal ProcessesA. S. Vaskou; V. S. Niss; V. K. Kononenko; A. S. Turtsevich; I. I. Rubtsevich; Ya. A. Solov'ev; A. F. Kerentsev20152015, vol.44, no.8
Determination of the Indium Arsenide Autoepitaxial Layers' Thickness by Fourier-Transform Infrared SpectroscopyO. S. Komkov; D. D. Firsov; E. A. Kovalishina; A. S. Petrov20152015, vol.44, no.8
Solar Cells with a Charge Pump: Theoretical Prospects and Technological Aspects of the ApplicationV. A. Gusev; V. V. Starkov; A. V. Teterskii20152015, vol.44, no.8
Processes during Annealing of Ti-Al-Ni and Ti-Al-Ni-Au Contact Metallization SystemsK. D. Vanyukhin; R. V. Zakharchenko; N. I. Kargin; M. V. Pashkov; L. A. Seidman20152015, vol.44, no.8
Boundary Processes in the Electrolyte-Silicon Interface Area during the Self-Organization of the Mosaic Structure of 3D Islets of Porous Silicon Nanocrystallites in the Long-Term Anode Etching of p-Si (100) in Electrolyte with an Internal Current SourceK. B. Tynyshtykbaev; Yu. A. Ryabikin; S. Zh. Tokmoldin; B. A. Rakymetov; T. Aytmukan; Kh. A. Abdullin20152015, vol.44, no.8
Long-Range Stresses Generated by Misfit Dislocations in Epitaxial FilmsE. M. Trukhanov; A. V. Kolesnikov; I. D. Loshkarev20152015, vol.44, no.8
Synthesis of Porous Silicon with Silver Nanoparticles by Low-Energy Ion ImplantationR. I. Batalov; V. F. Valeev; V. I. Nuzhdin; V. V. Vorebev; Yu. N. Osin; D. V. Lebedev; A. A. Bukharaev; A. L. Stepanov20152015, vol.44, no.8
Influence of the Silicon Layer's Properties on the Capacitance Parameters of MIS/SOS StructuresK. L. Enisherlova; V. G. Goryachev; E. M. Temper; S. A. Kapilin20152015, vol.44, no.8
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