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期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



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2005, vol.34, no.1 2005, vol.34, no.2 2005, vol.34, no.3 2005, vol.34, no.4 2005, vol.34, no.5 2005, vol.34, no.6

题名作者出版年年卷期
Fabrication of Strain-Relaxed Si{sub}(1-x)Ge{sub}x/Si(001) Buffer Layers of Low Surface RoughnessN. V. Vostokov; Yu. N. Drozdov; Z. F. Krasil'nik; O. A. Kuznetsov; A. V. Novikov; V. A. Perevoshchikov; M. V. Shaleev20052005, vol.34, no.4
Electron Cyclotron Resonance Used in Low-Pressure Microwave Plasma Reactors with Permanent MagnetsA. B. Petrin20052005, vol.34, no.4
Evaluating the Wall-Recombination Constant of Cl Atoms in Cl{sub}2-Ar Plasmas of Different Ar PercentageYu. V. Kirillov; D. V. Sitanov20052005, vol.34, no.4
Theory of the Vacuum Nanotriode - Part 2: The Possibility of Negative TransconductanceV. A. Zhukov20052005, vol.34, no.4
GaAs Pixel-Detector Technology for X-ray Medical Imaging: A ReviewG. M. Lezhneva; R. G. Melkadze; L. V. Khvedelidze20052005, vol.34, no.4
Si/Si{sub}(1-x)Ge{sub}x, Superlattice Structure from X-ray-Scattering DataS. N. Yakunin; E. M. Pashaev; A. A. Zaitsev; I. A. Subbotin; M. M. Rzaev; R. M. Imamov20052005, vol.34, no.4
Stresses near the Edges of a Square Silicon MembraneV. A. Gridchin; V. V. Grichenko; V. M. Lubimsky; A. V. Shaporin20052005, vol.34, no.4
Phase-Amplitude Relationship of One-Port Temperature-Stable Circuits Based on an Ultrawideband Current-Limiting BJT Amplifier and Designed to Provide Negative ResistanceV. G. Prokopenko20052005, vol.34, no.4



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