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期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



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2005, vol.34, no.1 2005, vol.34, no.2 2005, vol.34, no.3 2005, vol.34, no.4 2005, vol.34, no.5 2005, vol.34, no.6

题名作者出版年年卷期
Residual-Photoresist Removal from Si and GaAs Surfaces by Atomic-Hydrogen Flow TreatmentE. V. Anishchenko; V. A. Kagadei; E. V. Nefedtsev; K. V. Oskomov; D. I. Proskurovski; S. V. Romanenko20052005, vol.34, no.3
Electrical Behavior of In Situ Doped Polysilicon Films as Influenced by the DopantsA. A. Kovalevskii; V. E. Borisenko; V. M. Borisevich; A. V. Dolbik20052005, vol.34, no.3
Making Anodic Alumina Thin Films Having a Pore ArrayA. I. Vorobyova; E. A. Outkina20052005, vol.34, no.3
Adjusting the Spectral Response of Silicon Photodiodes by Additional Dopant ImplantationI. V. Vanyushin; V. A. Gergel; V. A. Zimoglyad; Yu. I. Tishin20052005, vol.34, no.3
Response Mechanism of the Base-in-Well Bipolar MagnetotransistorR. D. Tikhonov20052005, vol.34, no.3
Square-Membrane Deflection and Stress: Identifying the Validity Range of a Calculation ProcedureV. A. Gridchin; V. V. Grichenko; V. M. Lubimsky20052005, vol.34, no.3
Positron-Annihilation-Spectroscopy Study of Proton-Induced Defects in SiliconV. I. Grafutin; O. V. Ilyukhina; G. G. Myasishcheva; V. V. Kalugin; E. P. Prokopiev; S. P. Timoshenkov; N. O. Khmelevskii; Yu. V. Funtikov20052005, vol.34, no.3
Transient Analysis of Subnanosecond Integrated ADCsA. Marcinkevicius; D. Poviliauskas; V. Jasonis20052005, vol.34, no.3



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