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期刊


ISSN0957-4522
刊名Journal of Materials Science
参考译名材料科学杂志：电子材料
收藏年代1999～2013



全部

1999 2000 2001 2002 2003 2004
2005 2006 2007 2008 2009 2010
2011 2012 2013

2007, vol.18, no.10 2007, vol.18, no.11 2007, vol.18, no.12 2007, vol.18, no.1-3 2007, vol.18, no.1sup 2007, vol.18, no.4
2007, vol.18, no.5 2007, vol.18, no.6 2007, vol.18, no.7 2007, vol.18, no.8 2007, vol.18, no.9

题名作者出版年年卷期
Local vibrational modes of N{sub}2-O{sub}2 defects in Cz-SiliconNaomi Fujita; Robert Jones; Sven Oberg; Patrick R. Briddon20072007, vol.18, no.7
Characterization of intersubband devices combining a nonequilibrium many body theory with transmission spectroscopy experimentsM. F. Pereira, Jr.; R. Nelander; A. Wacker; D. G. Revin; M. R. Soulby; L. R. Wilson; J. W. Cockburn; A. B. Krysa; J. S. Roberts; R. J. Airey20072007, vol.18, no.7
The formation, migration, agglomeration and annealing of vacancy-type defects in self-implanted SiP. G. Coleman; R. E. Harding; G. Davies; J. Tan; J. Wong-Leung20072007, vol.18, no.7
Formation rate of vacancy-oxygen complexes in heat-treated Czochralski grown silicon under gamma-irradiationV. V. Emtsev; V. V. Emtsev, Jr.; G. A. Oganesyan20072007, vol.18, no.7
A DLTS study on plasma-hydrogenated n-type high-resistivity magnetic Cz siliconY. L. Huang; E. Simoen; C. Claeys; J. M. Rafi; P. Clauws20072007, vol.18, no.7
Comparative studies of defect production in heavily doped silicon under fast electron irradiation at different temperaturesV. V. Emtsev; P. Ehrhart; D. S. Poloskin; K. V. Emtsev20072007, vol.18, no.7
Doped silicon under uniaxial tensile strain investigated by PACNicole Santen; Reiner Vianden20072007, vol.18, no.7
Infrared absorption spectra of defects in carbon doped neutron-irradiated SiC. A. Londos; G. D. Antonaras; M. S. Potsidi; D. N. Aliprantis; A. Misiuk20072007, vol.18, no.7
Ab initio investigation of charge transfer technique for control of Schottky contacts in CNTsD. Casterman; M. M. De Souza20072007, vol.18, no.7
Analysis of the (100) Si/LaAlO{sub}3 structure by electron spin resonance: nature of the interfaceK. Clemer; A. Stesmans; V. V. Afanas'ev; L. F. Edge; D. G. Schlom20072007, vol.18, no.7
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