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期刊


ISSN0957-4522
刊名Journal of Materials Science
参考译名材料科学杂志：电子材料
收藏年代1999～2013



全部

1999 2000 2001 2002 2003 2004
2005 2006 2007 2008 2009 2010
2011 2012 2013

2001, vol.12, no.1 2001, vol.12, no.10 2001, vol.12, no.11 2001, vol.12, no.12 2001, vol.12, no.2 2001, vol.12, no.4-5-6
2001, vol.12, no.7 2001, vol.12, no.8 2001, vol.12, no.9

题名作者出版年年卷期
Electrical characterization of shallow cobalt-silicided junctionsE. Simoen; A. Poyai; C. Claeys; N. Lukyanchikova; M. Petrichuk; N. Garbar; A. Czerwinski; J. Katcki; J. Ratajczak; E. Gaubas20012001, vol.12, no.4-5-6
Processing factors influencing the leakage current in shallow junction diodes for deep submicro-meter CMOSL. Grau; E. Augendre; E. Simoen; R. Rooyackers; C. Claeys; G. Badenes; A. Romano-Podriguez20012001, vol.12, no.4-5-6
Novel materials for thermal via incorporation into SOI structuresP. Baine; Khor Yeap Choon; H. S. Gamble; B. M. Armstrong; S. J. M. Mitchell20012001, vol.12, no.4-5-6
Antimony and boron diffusion of SiGe and Si under the influence of injected point defectsJ. M. Bonar; A. F. W. Willoughby; A. H. Dan; B. M. Mcgregor; W. Lerch; D. Loeffelmacher; G. A. Cooke; M. G. Dowsett20012001, vol.12, no.4-5-6
Early stages of oxygen aggregation and thermal donors in silicon annealed under hydrostatic pressureV. V. Emtsev, Jr.; C. A. J. Ammerlaan; B. A. Andreev; V. V. Emtsev; G. A. Oganesyan; A. Misiuk; C. A. Londos20012001, vol.12, no.4-5-6
Radiation damage of N-MOSFETS fabricated in a BiCMOS processK. Kobayashi; H. Ohyama; M. Yoneoka; K. Hayama; M. Nakabayashi; E. Simoen; C. Claeys; Y. Takami; H. Takizawa; S. Kohiki20012001, vol.12, no.4-5-6
An electron paramagnetic resonance study of defects in PECVD silicon oxidesR. C. Barklie; M. Collins; M. Richardson; I. Borde20012001, vol.12, no.4-5-6
Fully relaxed Si{sub}0.7Ge{sub}0.3 buffers grown on patterned silicon substrates for hetero-CMOS transistorsG. Wohl; E. Kasper; T. Hackbarth; H. Kibbel; M. Klose; F. Ernst20012001, vol.12, no.4-5-6
Evaluation of the infrared absorption in nm-thick heavily boron-doped Si{sub}(1-x)Ge{sub}x layers on siliconA. Cavaco; N. A. Sobolev; M. C. Carmo; H. Presting; U. Konig20012001, vol.12, no.4-5-6
Band offsets and electron transport calculation for strained Si{sub}(1-x-y) Ge{sub}xC{sub}y/Si heterostructuresP. Dollfus; S. Galdin; P. Hesto; H. J. Osten20012001, vol.12, no.4-5-6
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