长垣产业园区科技文献服务平台

期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002~2023



全部

2002 2003 2004 2005 2006 2007
2008 2009 2010 2011 2012 2013
2014 2015 2016 2017 2018 2019
2020 2021 2022 2023

2012, vol.41, no.1 2012, vol.41, no.2 2012, vol.41, no.3 2012, vol.41, no.4 2012, vol.41, no.5 2012, vol.41, no.7
2012, vol.41, no.8

题名作者出版年年卷期
Microelectromechanical ConvertersV. P. Dragunov; D. I. Ostertak20122012, vol.41, no.2
I - V Characteristics and the Spectrum Width during Electron Tunneling through Nanosandwiches W-WO_2-(Au_(147)~-)-Al_2O_3-Al and Nd-Nd_2O_3-(Au_(55)~-)-Nd_2O_3-Nd. Part I: Quantum-Chemical Calculation of Energies of Orbitals for Anions ofV. A. Zhukov; V. G. Maslov20122012, vol.41, no.2
Single-Event-Upset Susceptibility Simulation of Sub-1-μm CMOS Dual-Path InvertersS. I. Ol'chev; V. Ya. Stenin20122012, vol.41, no.2
Peculiarities of Three-Dimensional Simulation of SOI MOS Transistors with an Indirect GateA. A. Glushko; V. A. Shakhnov20122012, vol.41, no.2
Fabrication of Magnetic Micro- and Nanostructures by Scanning Probe LithographyA. A. Bukharaev; D. A. Bizyaev; N. I. Nurgazizov; T. F. Khanipov20122012, vol.41, no.2
Influence of Radiation Defects on Diffusion of Arsenic and Antimony in Implanted SiliconM. Jadan; A. R. Chelyadinskii; V. Yu. Yavid20122012, vol.41, no.2
NV-Centers in Diamond. Part I. General Information, Fabrication Technology, and the Structure of the SpectrumA. V. Tsukanov20122012, vol.41, no.2